MMBF170Q-7-F The MMBF170Q-7-F is an N-Channel enhancement mode MOSFET from Diodes Incorporated. It features a 60V drain-source breakdown voltage and a continuous drain current of 500mA.
Mfr Part #:

MMBF170Q-7-F

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The MMBF170Q-7-F is an N-Channel enhancement mode MOSFET from Diodes Incorporated. It features a 60V drain-source breakdown voltage and a continuous drain current of 500mA.
✓ Total Stock: 37,020 pcs
$ Price Range: $0.99

MMBF170Q-7-F Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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37,020 pcs
37020 pcs On Request 1 On Request On Request On Request On Request On Request

MMBF170Q-7-F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Halogen Free
Input Capacitance
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Style
Mounting Type
Number of Channels
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

MMBF170Q-7-F Description

Short technical summary and product information.

The MMBF170Q-7-F is an N-Channel enhancement mode MOSFET manufactured by Diodes Incorporated. This component is designed for various applications requiring efficient switching and low on-resistance.

 

Key electrical specifications include a drain-source breakdown voltage (Vdss) of 60V and a continuous drain current (Id) of 500mA at ambient temperature. The gate-source threshold voltage (Vgs(th)) is a maximum of 3V at 250µA, with a maximum gate-source voltage (Vgs) of ±20V. The on-resistance (Rds On) is a maximum of 5 Ohm at 200mA and 10V.

 

This MOSFET is housed in a compact SOT-23-3 surface mount package, making it suitable for space-constrained designs. It operates within a temperature range of -55°C to 150°C. The device is also noted for its low input capacitance and fast switching speed.

 

Environmental compliance includes RoHS3 compliance and Moisture Sensitivity Level 1 (MSL 1) rating, indicating suitability for standard manufacturing processes.

MMBF170Q-7-F Quick Information

Product Type: MOSFET
Series: MMBF170
Canonical Name: MMBF170Q-7-F N-Channel Enhancement Mode MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

MMBF170Q-7-F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Totally Lead-Free

MMBF170Q-7-F Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBF170Q-7-F Features

  • N-Channel enhancement mode MOSFET.
  • 60V drain-source breakdown voltage.
  • 500mA continuous drain current.
  • 5 Ohm maximum on-resistance.
  • SOT-23-3 surface mount package.

MMBF170Q-7-F Applications

  • Suitable for general switching tasks.
  • Ideal for low-power applications.
  • Used in compact electronic circuits.
  • Component for power management.

MMBF170Q-7-F FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the MMBF170Q-7-F?

The drain-source breakdown voltage is 60V.

What is the continuous drain current for the MMBF170Q-7-F?

The continuous drain current is 500mA.

What is the maximum on-resistance of the MMBF170Q-7-F?

The maximum on-resistance is 5 Ohm at 200mA and 10V.

What is the gate-source threshold voltage for this MOSFET?

The gate-source threshold voltage is a maximum of 3V at 250µA.

What package type is the MMBF170Q-7-F supplied in?

It is supplied in a SOT-23-3 surface mount package.

What is the operating temperature range for the MMBF170Q-7-F?

The operating temperature range is -55°C to 150°C.

Is the MMBF170Q-7-F RoHS compliant?

Yes, it is RoHS3 Compliant.

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