MMBF170LT1G The MMBF170LT1G is an N-Channel MOSFET from ON Semiconductor, designed for surface mount applications. It offers a 60V drain-source voltage and 500mA continuous current.
Mfr Part #:

MMBF170LT1G

Available from 8 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMBF170LT1G is an N-Channel MOSFET from ON Semiconductor, designed for surface mount applications. It offers a 60V drain-source voltage and 500mA continuous current.
✓ Total Stock: 116,216 pcs
$ Price Range: $0.99

MMBF170LT1G Available from 8 distributors

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✓ Non-Authorised

MMBF170LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

MMBF170LT1G Description

Short technical summary and product information.

The MMBF170LT1G is an N-Channel MOSFET manufactured by ON Semiconductor, housed in a compact SOT-23-3 (TO-236) surface-mount package. This device is rated for a maximum drain-source voltage (Vdss) of 60V and can handle a continuous drain current of 500mA. Its static drain-source on-resistance (RDS(on)) is a maximum of 5 Ohms at 200mA and 10V gate-source voltage.

 

Key electrical characteristics include a gate threshold voltage (Vgs(th)) ranging from 0.8V to 3.0V at 1.0mA, and an input capacitance (Ciss) of 60pF at 10V. The MOSFET also features relatively fast switching times, with turn-on and turn-off delays typically around 10ns.

 

With a maximum power dissipation of 225mW at 25°C ambient temperature and an operating temperature range of -55°C to 150°C, the MMBF170LT1G is suitable for a variety of general-purpose switching and amplification applications. Its Pb-free and RoHS compliant status further enhances its suitability for modern electronic designs.

MMBF170LT1G Quick Information

Product Type: MOSFET
Series: MMBF170LT1G
Canonical Name: MMBF170LT1G N-Channel MOSFET
Subcategory: N-Channel

MMBF170LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MMBF170LT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBF170LT1G Features

  • 60V drain-source voltage rating.
  • 500mA continuous drain current.
  • Low 5 Ohm on-resistance.
  • Fast switching times.
  • Compact SOT-23-3 package.

MMBF170LT1G Applications

  • Suitable for general switching tasks.
  • Used in low-power amplification circuits.
  • Ideal for space-constrained designs.
  • Component in portable electronics.

MMBF170LT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the MMBF170LT1G?

The maximum drain-source voltage (Vdss) for the MMBF170LT1G is 60 Vdc.

What is the continuous drain current rating of the MMBF170LT1G?

The MMBF170LT1G has a continuous drain current rating of 500 mA.

What is the operating temperature range for this MOSFET?

The operating temperature range for the MMBF170LT1G is -55°C to 150°C.

What is the package type of the MMBF170LT1G?

The MMBF170LT1G is supplied in a SOT-23-3 (TO-236) package.

Is the MMBF170LT1G RoHS compliant?

Yes, the MMBF170LT1G is RoHS3 Compliant.

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