| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,380 pcs
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4380 pcs | On Request | 10 | On Request | On Request | On Request | On Request | On Request |
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The MMBF170 is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Fairchild Semiconductor Corporation. It utilizes a high cell density DMOS technology designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance.
Key electrical characteristics include a drain-source breakdown voltage of 60V and a continuous drain current of 500mA. The static drain-source on-resistance is a maximum of 5 Ohms at 200mA drain current and 10V gate-source voltage. It also features a typical gate threshold voltage ranging from 0.8V to 3V.
This transistor is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Its SOT-23 package is designed for surface mounting.
Features include a high-density cell design for low Rds(on), voltage-controlled small signal switching, and rugged, reliable performance with high saturation current capability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the MMBF170 is 60V.
The MMBF170 has a continuous drain current of 500mA.
The typical gate threshold voltage (Vgs(th)) for the MMBF170 is 2.1V, with a range of 0.8V to 3V.
The maximum static drain-source on-resistance (Rds(on)) for the MMBF170 is 5 Ohms when measured at 10V gate-source voltage and 200mA drain current.
The MMBF170 is available in a SOT-23 package.
The operating and storage temperature range for the MMBF170 is -55 to 150 degrees Celsius.