| Category | |
| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Current | |
| Diode Capacitance | |
| Forward Current | |
| Forward Voltage | |
| Halogen Free | |
| Junction and Storage Temperature Range | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Non-Repetitive Peak Forward Surge Current | |
| Operating Temperature | |
| Peak Forward Surge Current | |
| Reverse Breakdown Voltage | |
| Reverse Recovery Time | |
| Reverse Recovery Time (trr) | |
| Reverse Voltage | |
| Reverse Voltage Leakage Current | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance Junction-to-Ambient | |
| Total Device Dissipation | |
| Voltage |
The On Semiconductor MMBD914LT1G is a high-speed switching diode designed for various electronic applications. It offers a reverse voltage of up to 100V and a continuous forward current of 200mA.
Key electrical specifications include a peak forward surge current of 500mA and a non-repetitive peak forward surge current of 1.0A. The diode has a forward voltage of 1Vdc at 10mA and a reverse leakage current of 25nA at 100Vdc. Its technology is classified as Standard, with a speed suitable for small signal applications up to 200mA.
This device operates within a junction and storage temperature range of -55°C to 150°C. The total device dissipation is rated at 225mW on an FR-5 board, with a thermal resistance of 556°C/W (junction-to-ambient).
The MMBD914LT1G is supplied in a SOT-23-3 surface mount package, facilitating easy integration into printed circuit boards. It is available on tape and reel for automated assembly processes.
The maximum reverse voltage is 100 V.
The forward current rating is 200 mA.
The peak forward surge current is 500 mA.
The forward voltage is 1 Vdc at 10 mA.
The reverse recovery time is 4 ns.
The MMBD914LT1G is in a SOT-23-3 package.
The operating temperature range is -55°C to 150°C.