MMBD914LT1
Motorola Semicondutor
The MMBD914LT1 is a general purpose diode from Motorola Semiconductor. It features a 100V reverse voltage and 200mA forward current.
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2,900 pcs
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2900 pcs | On Request | 1 | On Request | On Request | 321 | On Request | On Request | |
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2,228 pcs
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2228 pcs | On Request | 1 | On Request | On Request | 06+13 | On Request | On Request | |
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205 pcs
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205 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon MMBD914LT1 is a general purpose diode, suitable for a wide range of electronic applications. It offers a maximum reverse voltage of 100V and can handle an average rectified current of up to 200mA.
This diode boasts a fast switching speed with a reverse recovery time of 4ns, making it efficient for signal processing and switching tasks. Its capacitance is rated at 4pF at 0V and 1MHz. The forward voltage drop is 1V at 10mA, and the reverse leakage current is 5µA at 75V.
Packaged in a surface-mount SOT-23-3 (TO-236) configuration, the MMBD914LT1 is designed for compact electronic systems. It operates within a junction temperature range of -55°C to 150°C, providing reliability in various environmental conditions.
Compliance information indicates RoHS3 status as compliant, REACH as unaffected, and an MSL rating of 1. This diode is a component within the broader category of discrete semiconductor products.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum DC reverse voltage (Vr) for the MMBD914LT1 diode is 100V.
The MMBD914LT1 diode has an average rectified current (Io) of 200mA.
The reverse recovery time (trr) for the MMBD914LT1 diode is 4ns.
The MMBD914LT1 diode operates within a junction temperature range of -55°C to 150°C.
The MMBD914LT1 diode is supplied in a surface mount SOT-23-3 (TO-236) package.