MMBD914LT1 The MMBD914LT1 is a high-speed switching diode from Infineon Technologies, rated for 100V reverse voltage and 250mA forward current. It features a fast 4ns reverse recovery time and is packaged in a surface-mount SOT-23 case.
Mfr Part #:

MMBD914LT1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The MMBD914LT1 is a high-speed switching diode from Infineon Technologies, rated for 100V reverse voltage and 250mA forward current. It features a fast 4ns reverse recovery time and is packaged in a surface-mount SOT-23 case.
Total Stock: 4,296 pcs

MMBD914LT1 Available from 1 distributor

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MMBD914LT1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
AEC-Q101
Capacitance @ Vr, F
Current
Current - Average Rectified (Io)
Forward Voltage (Maximum @ IF = 10 mA)
Forward Voltage (Maximum @ IF = 100 mA)
Junction Temperature
Mounting Type
Reverse Current (Maximum @ VR = 20 V)
Reverse Current (Maximum @ VR = 75 V)
Reverse Recovery Time (trr)
Speed
Standard Packing (Reel 180 mm)
Standard Packing (Reel 330 mm)
Storage Temperature Range
Supplier Device Package
Tape & Reel
Technology
Total Power Dissipation
Voltage
Voltage - DC Reverse (Vr) (Max)

MMBD914LT1 Description

Short technical summary and product information.

The MMBD914LT1 is a standard silicon switching diode manufactured by Infineon Technologies. It is designed for high-speed switching applications and is rated for a maximum reverse voltage of 100V and an average rectified forward current of 250mA. The diode exhibits a forward voltage of 855 mV at 10 mA and 1.2 V at 100 mA. Its reverse recovery time is typically 4 ns, making it suitable for fast switching circuits.

 

The device is housed in a surface-mount SOT-23 (TO-236) package, which is standard for small-signal diodes. The junction temperature is rated up to 150°C, and the total power dissipation is 370 mW at a soldering point temperature of 54°C. The diode also features low leakage current (0.025 µA at 20V reverse) and low capacitance (2 pF at 0V, 1 MHz).

 

Typical applications include high-speed switching, logic circuits, and general-purpose rectification in low-power systems. The device is RoHS compliant and qualified according to AEC Q101 for automotive applications.

MMBD914LT1 Quick Information

Product Type: Switching Diode
Series: MMBD914
Canonical Name: Infineon Technologies MMBD914LT1 Silicon Switching Diode
Subcategory: Single Rectifier Diode

MMBD914LT1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBD914LT1 Features

  • High-speed switching with 4 ns reverse recovery time.
  • Rated for 100V reverse voltage and 250mA forward current.
  • Low forward voltage of 855 mV at 10 mA.
  • Surface-mount SOT-23 package for compact designs.
  • RoHS compliant and AEC Q101 qualified.

MMBD914LT1 Applications

  • Ideal for high-speed switching in logic circuits.
  • Used in general-purpose rectification up to 250 mA.
  • Suitable for automotive control modules per AEC Q101.
  • Applicable in signal processing and protection circuits.

MMBD914LT1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage of the MMBD914LT1?

The maximum reverse voltage is 100V.

What is the maximum average rectified forward current?

The maximum average rectified forward current is 250 mA.

What is the forward voltage at 10 mA?

The forward voltage is a maximum of 855 mV at 10 mA.

What is the reverse recovery time?

The reverse recovery time is a maximum of 4 ns.

What package is the MMBD914LT1 available in?

The device is packaged in a surface-mount SOT-23 (TO-236) package.

What is the diode capacitance at 0V?

The diode capacitance is a maximum of 2 pF at 0V and 1 MHz.

Is the MMBD914LT1 RoHS compliant?

Yes, the device is RoHS compliant (RoHS3).

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