MMBD4148,215 High-speed switching diode from NXP Semiconductors, rated for 75V reverse voltage and 215mA forward current. Features fast 4ns reverse recovery time and low capacitance of 1.5pF.
Mfr Part #:

MMBD4148,215

Available from 3 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
High-speed switching diode from NXP Semiconductors, rated for 75V reverse voltage and 215mA forward current. Features fast 4ns reverse recovery time and low capacitance of 1.5pF.
Total Stock: 27,098 pcs

MMBD4148,215 Available from 3 distributors

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MMBD4148,215 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Ambient Temperature Range
Capacitance @ Vr, F
Current
Forward Voltage (Maximum @ IF = 1 mA)
Forward Voltage (Maximum @ IF = 10 mA)
Mounting Type
Operating Temperature
Reverse Current
Reverse Recovery Time (trr)
Speed
Storage Temperature
Storage Temperature Range
Supplier Device Package
Tape & Reel
Technology
Thermal Resistance from Junction to Ambient
Thermal Resistance from Junction to Tie-point
Total Power Dissipation
Voltage

MMBD4148,215 Description

Short technical summary and product information.

The MMBD4148,215 is a high-speed switching diode from NXP Semiconductors, encapsulated in a small SOT23 (TO-236AB) surface-mount plastic package. It is designed for high-speed switching and general-purpose applications.

 

Electrical characteristics include a maximum reverse voltage of 75 V, maximum forward current of 215 mA, and a forward voltage of 715 mV at 1 mA (855 mV at 10 mA). The diode offers a fast reverse recovery time of 4 ns (typ) and low capacitance of 1.5 pF at 0 V bias. Leakage current is low at 0.5 µA maximum at 75 V reverse voltage.

 

Thermal specifications: maximum junction temperature of 150°C, power dissipation of 250 mW at 25°C ambient, and thermal resistance from junction to ambient of 500 K/W on FR4 PCB. The device operates over an ambient temperature range of -65°C to +150°C. It is rated for repetitive peak reverse voltage of 75 V and non-repetitive peak forward current up to 4 A (1 µs pulse).

 

The package is a 3-lead SOT23 (TO-236-3, SC-59, SOT-23-3) with supplier device package TO-236AB. The diode is mounted via surface mount technology. RoHS3 compliance is indicated (unverified), MSL level 1, and REACH unaffected.

MMBD4148,215 Quick Information

Product Type: Switching Diode
Series: MMBD4148
Canonical Name: MMBD4148,215 High-Speed Switching Diode
Subcategory: High-Speed Switching Diode

MMBD4148,215 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBD4148,215 Features

  • High switching speed with trr ≤ 4 ns.
  • Low capacitance of 1.5 pF typical.
  • Rated for 75 V reverse voltage.
  • Maximum forward current of 215 mA.
  • Surface-mount SOT23-3 package.

MMBD4148,215 Applications

  • Ideal for high-speed switching circuits.
  • Used in general-purpose diode applications.
  • Suitable for low-capacitance signal routing.
  • Common in portable electronics.

MMBD4148,215 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the reverse voltage rating?

Maximum reverse voltage is 75 V.

What is the maximum forward current?

Maximum forward current is 215 mA.

What is the forward voltage drop?

Forward voltage is 715 mV at 1 mA and 855 mV at 10 mA.

What is the reverse recovery time?

Reverse recovery time is 4 ns maximum (tested at IF=10 mA to IR=10 mA, RL=100 Ω).

What is the package type?

The device is available in SOT23 (TO-236-3, SC-59, SOT-23-3) surface-mount package.

What is the capacitance of the diode?

Typical capacitance is 1.5 pF at 0 V bias and 1 MHz.

What is the operating temperature range?

Junction temperature range is -65°C to +150°C.

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