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MMBD355LT1G The MMBD355LT1G is a dual hot carrier mixer diode from On Semiconductor, featuring a Schottky configuration with a common anode. It is rated for a maximum reverse voltage of 7V and a power dissipation of 225mW.
Mfr Part #:

MMBD355LT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMBD355LT1G is a dual hot carrier mixer diode from On Semiconductor, featuring a Schottky configuration with a common anode. It is rated for a maximum reverse voltage of 7V and a power dissipation of 225mW.
✓ Total Stock: 33,000 pcs
$ Price Range: $0.07 - $0.18

MMBD355LT1G Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
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33,000 pcs
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33000 pcs On Request 1 On Request On Request On Request On Request On Request
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MMBD355LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Capacitance @ Vr, F
Diode Type
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Voltage
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MMBD355LT1G Description

Short technical summary and product information.

The MMBD355LT1G is a dual hot carrier mixer diode designed primarily for UHF mixer applications, but also suitable for detector and ultra-fast switching circuits. It features a Schottky barrier with a common anode configuration, providing low forward voltage and very low capacitance.

 

Key electrical specifications include a maximum reverse voltage of 7V, a typical forward voltage of 0.5V at 10mA, and a maximum reverse leakage current of 10µA at 7V. The device has a very low capacitance of 1.0pF at 0V and 1MHz, making it ideal for high-frequency applications. Maximum power dissipation is 225mW on an FR-5 board at 25°C.

 

The MMBD355LT1G is housed in a surface-mount SOT-23-3 (TO-236) package, which is Pb-Free, Halogen Free/BFR Free, and RoHS compliant. It operates over a junction temperature range of -55°C to 150°C.

MMBD355LT1G Quick Information

Product Type: Dual Hot Carrier Mixer Diode
Canonical Name: MMBD355LT1G Dual Hot Carrier Mixer Diode
Subcategory: RF Diodes

MMBD355LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

MMBD355LT1G Estimated Pricing

Qty Low High
1+ $0.18 $0.18
10+ $0.11 $0.11
100+ $0.08 $0.08
500+ $0.08 $0.08
1,000+ $0.07 $0.07
3,000+ $0.07 $0.07
6,000+ $0.07 $0.07

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBD355LT1G Features

  • Dual Schottky diode with common anode.
  • Very low capacitance of 1.0pF at 0V.
  • Low forward voltage of 0.5V typical at 10mA.
  • Rated for 7V maximum reverse voltage.
  • Surface-mount SOT-23-3 (TO-236) package.

MMBD355LT1G Applications

  • Ideal for UHF mixer applications.
  • Suitable for detector circuits.
  • Used in ultra-fast switching circuits.
  • Designed for high-frequency RF designs.

MMBD355LT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage of the MMBD355LT1G?

The maximum continuous reverse voltage is 7V.

What is the forward voltage of the MMBD355LT1G at 10mA?

The typical forward voltage is 0.5V, with a maximum of 0.6V at IF = 10mA.

What is the capacitance of the MMBD355LT1G?

The maximum capacitance is 1.0pF at VR = 0V and f = 1.0MHz.

What is the package type for the MMBD355LT1G?

The device is available in a surface-mount SOT-23-3 (TO-236) package.

What is the maximum power dissipation of the MMBD355LT1G?

The maximum power dissipation is 225mW on an FR-5 board at TA = 25°C.

What is the operating temperature range for the MMBD355LT1G?

The junction and storage temperature range is -55°C to +150°C.

Is the MMBD355LT1G RoHS compliant?

Yes, the device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant as per the datasheet.

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