MMBD353LT1G Dual Schottky diode with 7V maximum reverse voltage and 225mW power dissipation. Designed for UHF mixer and fast switching circuits.
Mfr Part #:

MMBD353LT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual Schottky diode with 7V maximum reverse voltage and 225mW power dissipation. Designed for UHF mixer and fast switching circuits.
✓ Total Stock: 14,300 pcs
$ Price Range: $0.04 - $0.10

MMBD353LT1G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
12,000 pcs
12000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,300 pcs
2300 pcs On Request 1 On Request On Request On Request On Request On Request

MMBD353LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Capacitance
Capacitance @ Vr, F
Diode Type
Forward Voltage
Halogen Free
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Termination Style
Voltage

MMBD353LT1G Description

Short technical summary and product information.

The MMBD353LT1G is a dual Schottky diode from On Semiconductor, designed primarily for UHF mixer applications but also suitable for detector and ultra-fast switching circuits. It features a very low capacitance of less than 1.0 pF at zero volts and a low forward voltage of 0.6V maximum at 10mA. The device is housed in a surface-mount SOT-23-3 package (TO-236) and is Pb-Free, Halogen Free/BFR Free, and RoHS compliant. With a maximum continuous reverse voltage of 7V per diode and a total power dissipation of 225mW on FR-5 board (300mW on alumina substrate), it offers reliable performance in RF and high-speed switching applications. The operating temperature range is -55°C to 150°C.

MMBD353LT1G Quick Information

Product Type: RF Schottky Diode
Series: MMBD353LT1G
Canonical Name: MMBD353LT1G Dual Schottky Diode, 7V, 225mW, SOT-23-3
Subcategory: RF Diodes

MMBD353LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

MMBD353LT1G Estimated Pricing

Qty Low High
1+ $0.10 $0.10
10+ $0.06 $0.06
100+ $0.05 $0.05
500+ $0.04 $0.04
1,000+ $0.04 $0.04
3,000+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBD353LT1G Features

  • Very low capacitance: 1 pF at 0V.
  • Low forward voltage: 0.6V max at 10mA.
  • Dual series-connected Schottky diodes.
  • Surface-mount SOT-23-3 package.
  • Pb-Free, Halogen Free, RoHS compliant.

MMBD353LT1G Applications

  • Ideal for UHF mixer circuits.
  • Suitable for detector and fast switching circuits.
  • Used in RF signal processing applications.
  • Can be used in automotive applications (NSV variant).

MMBD353LT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage per diode?

7V per diode.

What is the forward voltage at 10mA?

0.6V maximum at 10mA.

What is the package type?

SOT-23-3 (TO-236).

What is the capacitance at 0V?

1 pF maximum at 0V, 1MHz.

What is the power dissipation?

225mW on FR-5 board, 300mW on alumina substrate.

What is the operating temperature range?

-55°C to 150°C.

Is the MMBD353LT1G RoHS compliant?

Yes, RoHS3 compliant (unverified).

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