MMBD352WT1G The MMBD352WT1G is an RF Schottky diode from On Semiconductor designed for UHF mixer applications. It features a low capacitance of 1pF and a low forward voltage.
Mfr Part #:

MMBD352WT1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMBD352WT1G is an RF Schottky diode from On Semiconductor designed for UHF mixer applications. It features a low capacitance of 1pF and a low forward voltage.
✓ Total Stock: 40,118 pcs
$ Price Range: $0.99

MMBD352WT1G Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
25,020 pcs
25020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
14,873 pcs
14873 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
225 pcs
225 pcs On Request 1 On Request On Request On Request On Request On Request

MMBD352WT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Capacitance @ Vr, F
Diode Type
Halogen Free
Operating Temperature
Power Dissipation (Max)
Supplier Device Package
Tape & Reel
Voltage

MMBD352WT1G Description

Short technical summary and product information.

The MMBD352WT1G is a dual Schottky barrier diode manufactured by On Semiconductor, primarily intended for UHF mixer applications, but also suitable for detector and ultra-fast switching circuits. This device offers a very low capacitance of less than 1.0 pF at 0V and a low forward voltage of 0.5V typical at 10mA.

 

Key electrical specifications include a continuous reverse voltage rating of 7V, a maximum power dissipation of 200 mW on an FR-5 board, and a maximum junction temperature of 150°C. The diode type is Schottky with a 1 pair series connection.

 

Packaged in an SC-70 (SOT-323) surface mount package, the MMBD352WT1G is supplied on tape and reel with 3,000 units per reel. It is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. The NSV prefix variant is AEC Qualified and PPAP Capable, suitable for automotive and other applications requiring unique site and control change requirements.

MMBD352WT1G Quick Information

Product Type: RF Diode
Canonical Name: Dual Schottky Barrier Diode
Subcategory: RF Diode

MMBD352WT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MMBD352WT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBD352WT1G Features

  • Low capacitance less than 1.0 pF.
  • Low forward voltage 0.5V typical.
  • 7V continuous reverse voltage.
  • 200mW maximum power dissipation.
  • SC-70 (SOT-323) package.

MMBD352WT1G Applications

  • Used in RF switching circuits
  • Suitable for RF detection applications
  • Ideal for rectification in RF systems
  • Surface mount in compact designs

MMBD352WT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage for the MMBD352WT1G?

The continuous reverse voltage rating is 7V.

What is the typical forward voltage of the MMBD352WT1G at 10mA?

The typical forward voltage is 0.5V at 10mA.

What is the capacitance of the MMBD352WT1G at 0V and 1MHz?

The capacitance is a maximum of 1.0pF at 0V and 1MHz.

What is the maximum power dissipation for the MMBD352WT1G on an FR-5 board?

The maximum power dissipation is 200 mW on an FR-5 board at 25°C.

What is the operating temperature range for the MMBD352WT1G?

The operating junction and storage temperature range is -55°C to +150°C.

What package type is the MMBD352WT1G available in?

The MMBD352WT1G is available in an SC-70, SOT-323 package.

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