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MMBD352LT1G Dual Schottky diode pair designed for UHF mixer, detector, and ultra-fast switching circuits. Features 7V reverse voltage, 0.5V typical forward voltage at 10mA, and 1pF capacitance.
Mfr Part #:

MMBD352LT1G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual Schottky diode pair designed for UHF mixer, detector, and ultra-fast switching circuits. Features 7V reverse voltage, 0.5V typical forward voltage at 10mA, and 1pF capacitance.
✓ Total Stock: 26,025 pcs
$ Price Range: $0.08 - $0.38

MMBD352LT1G Available from 4 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

MMBD352LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Capacitance @ Vr, F
Diode Type
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Supplier Device Package
Tape & Reel
Termination Style
Voltage
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MMBD352LT1G Description

Short technical summary and product information.

The MMBD352LT1G is a dual hot carrier mixer diode (Schottky type) from onsemi, designed primarily for UHF mixer applications but also suitable for detector and ultra-fast switching circuits. It features a very low capacitance of less than 1.0 pF at zero bias and a low forward voltage of 0.5 V typical at 10 mA.

 

Electrical specifications: maximum continuous reverse voltage 7 V per diode, maximum forward voltage 0.6 V at 10 mA, reverse leakage current 0.25 µA maximum at 3 V and 10 µA maximum at 7 V. Power dissipation is 225 mW on FR-5 board and 300 mW on alumina substrate, with thermal resistance of 556 °C/W and 417 °C/W respectively. Operating junction temperature range is -55°C to +150°C.

 

The device is packaged in a surface-mount SOT-23-3 (TO-236, SC-59) case. It is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

MMBD352LT1G Quick Information

Product Type: Diodes - RF
Series: MMBD352LT1G
Canonical Name: Dual Schottky RF Mixer Diode, 7V Reverse Voltage, SOT-23-3
Subcategory: Schottky RF Diode

MMBD352LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

MMBD352LT1G Estimated Pricing

Qty Low High
1+ $0.38 $0.38
10+ $0.23 $0.23
100+ $0.14 $0.14
500+ $0.10 $0.10
1,000+ $0.09 $0.09
3,000+ $0.08 $0.08

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBD352LT1G Features

  • Very low capacitance: 1pF max at zero bias.
  • Low forward voltage: 0.5V typical at 10mA.
  • Dual diode in series connection for RF mixer.
  • Surface mount SOT-23-3 package.
  • RoHS compliant and Pb-Free.

MMBD352LT1G Applications

  • Designed for UHF mixer applications.
  • Suitable for detector and ultra-fast switching.
  • Used in RF signal processing circuits.
  • Ideal for high-frequency diode switching.

MMBD352LT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage of the MMBD352LT1G?

The maximum continuous reverse voltage is 7 V per diode.

What is the typical forward voltage at 10 mA?

The typical forward voltage is 0.5 V at 10 mA; maximum is 0.6 V.

What package is the MMBD352LT1G available in?

It is available in a surface-mount SOT-23-3 (TO-236, SC-59) package.

What is the capacitance of the MMBD352LT1G?

The maximum capacitance is 1.0 pF at 0 V bias and 1 MHz.

What is the power dissipation of the MMBD352LT1G?

Maximum power dissipation is 225 mW on FR-5 board and 300 mW on alumina substrate at 25°C ambient.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is the MMBD352LT1G RoHS compliant?

The datasheet states the device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

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