MMBD2836LT1G MMBD2836LT1G is a monolithic dual switching diode array from On Semiconductor. It features 75V reverse voltage, 100mA forward current, and 4ns reverse recovery time in a surface-mount SOT-23-3 package.
Mfr Part #:

MMBD2836LT1G

Available from 6 distributors
Mfr Name: On Semiconductor
On Semiconductor
MMBD2836LT1G is a monolithic dual switching diode array from On Semiconductor. It features 75V reverse voltage, 100mA forward current, and 4ns reverse recovery time in a surface-mount SOT-23-3 package.
Total Stock: 544,641 pcs
$ Price Range: $0.03 - $0.16

MMBD2836LT1G Available from 6 distributors

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Non-Authorised

MMBD2836LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Diode Capacitance
Diode Configuration
Forward Current
Forward Voltage (Maximum @ IF = 10 mA)
Forward Voltage (Maximum @ IF = 50 mA)
Halogen Free
Industrial Grade
Junction Temperature
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Maximum @ Alumina Substrate, TA = 25 °C)
Power Dissipation (Maximum @ FR -5 Board, TA = 25 °C)
Reverse Breakdown Voltage
Reverse Recovery Time (trr)
Reverse Voltage
Speed
Standard Package Qty
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Thermal Resistance Junction To Ambient (Maximum @ Alumina Substrate)
Thermal Resistance Junction To Ambient (Maximum @ FR -5 Board)
Voltage

MMBD2836LT1G Description

Short technical summary and product information.

The MMBD2836LT1G is a monolithic dual switching diode array manufactured by On Semiconductor (onsemi). It consists of two independent diodes in a common anode configuration, each rated for a maximum reverse voltage of 75V and a forward current of 100mA. The device is designed for high-speed switching applications with a typical reverse recovery time of 4ns and low diode capacitance of 4.0pF.

 

Electrical characteristics include a forward voltage of 1.0V at 10mA and 50mA, and 1.2V at 100mA. Reverse leakage current is limited to 100nA at 50V. The device can operate over a junction temperature range of -55°C to 150°C. Power dissipation is 225mW on FR-5 board and 300mW on alumina substrate.

 

The MMBD2836LT1G is housed in a surface-mount SOT-23-3 (TO-236) package with gull wing leads. It is supplied in tape and reel packaging with 3000 units per reel. The device is Pb-free, halogen-free, and RoHS compliant, making it suitable for environmentally sensitive designs.

MMBD2836LT1G Quick Information

Series: MMBD2836
Subcategory: Rectifiers - Arrays

MMBD2836LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

MMBD2836LT1G Estimated Pricing

Qty Low High
1+ $0.16 $0.16
10+ $0.10 $0.10
100+ $0.06 $0.06
500+ $0.04 $0.04
1,000+ $0.04 $0.04
3,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBD2836LT1G Features

  • Dual common anode diode configuration.
  • 75V maximum reverse voltage rating.
  • 100mA forward current capability.
  • 4ns fast reverse recovery time.
  • Surface mount SOT-23-3 package.

MMBD2836LT1G Applications

  • High-speed switching in signal processing.
  • General purpose diode array applications.
  • Used in logic and interface circuits.
  • Suitable for portable electronics.

MMBD2836LT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage of the MMBD2836LT1G?

75V per diode.

What is the maximum forward current?

100mA per diode.

What is the forward voltage drop?

1.0V at 10mA and 50mA, 1.2V at 100mA.

What is the reverse recovery time?

4ns maximum.

What package is the MMBD2836LT1G available in?

SOT-23-3 (TO-236) surface mount package.

What is the operating temperature range?

-55°C to 150°C.

Is the MMBD2836LT1G RoHS compliant?

Yes, it is RoHS compliant, Pb-free, and halogen-free.

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