MMBD101LT1G MMBD101LT1G is a Schottky barrier diode from On Semiconductor designed for UHF mixer, detector, and ultra-fast switching applications. Key specs include 7V reverse voltage, 225mW power dissipation, and very low capacitance under 1pF.
Mfr Part #:

MMBD101LT1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
MMBD101LT1G is a Schottky barrier diode from On Semiconductor designed for UHF mixer, detector, and ultra-fast switching applications. Key specs include 7V reverse voltage, 225mW power dissipation, and very low capacitance under 1pF.
✓ Total Stock: 18,835 pcs
$ Price Range: $0.05 - $0.13

MMBD101LT1G Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
13,020 pcs
13020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,815 pcs
2815 pcs On Request 1 On Request On Request On Request On Request On Request

MMBD101LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Capacitance @ Vr, F
Diode Type
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Storage Temperature
Supplier Device Package
Tape & Reel
Termination Style
Voltage

MMBD101LT1G Description

Short technical summary and product information.

The MMBD101LT1G is a Schottky barrier diode manufactured by On Semiconductor, optimized for high-frequency applications such as UHF mixers, detectors, and ultra-fast switching circuits.

 

It features a maximum reverse voltage of 7V and a forward power dissipation of 225mW at 25°C. The diode offers a very low capacitance of less than 1pF typical at 0V bias, making it suitable for RF applications. It also has a low noise figure of 6.0dB typical at 1GHz and a low forward voltage of 0.5V typical at 10mA forward current.

 

The device is supplied in a surface-mount SOT-23-3 package with gull wing termination style, and is available in tape and reel packaging with a standard quantity of 3000 units. It is RoHS compliant and lead-free (Pb-Free).

MMBD101LT1G Quick Information

Product Type: Schottky Barrier Diode
Canonical Name: MMBD101LT1G Schottky Barrier Diode
Subcategory: RF Diodes

MMBD101LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

MMBD101LT1G Estimated Pricing

Qty Low High
1+ $0.13 $0.13
10+ $0.08 $0.08
100+ $0.06 $0.06
500+ $0.06 $0.06
1,000+ $0.05 $0.05
3,000+ $0.05 $0.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBD101LT1G Features

  • Low noise figure of 6.0 dB typical.
  • Very low capacitance under 1.0 pF.
  • High forward conductance at 10 mA.
  • Surface mount SOT-23-3 package.
  • RoHS compliant and lead-free.

MMBD101LT1G Applications

  • UHF mixer circuits for RF designs.
  • Detector circuits for high-frequency signals.
  • Ultra-fast switching applications.
  • Low capacitance RF signal routing.

MMBD101LT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage of the MMBD101LT1G?

The maximum reverse voltage is 7V.

What is the forward voltage at 10 mA?

The typical forward voltage is 0.5V, with a maximum of 0.6V at 10 mA forward current.

What is the package type for the MMBD101LT1G?

The device is supplied in a surface-mount SOT-23-3 package.

What is the typical noise figure at 1 GHz?

The typical noise figure is 6.0 dB at 1 GHz.

Is the MMBD101LT1G RoHS compliant?

Yes, the device is RoHS compliant and lead-free (Pb-Free).

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