| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,711 pcs
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1711 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,110 pcs
|
1110 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor MJW3281AG is a high-performance NPN power bipolar transistor from the PowerBase series. It is engineered for demanding applications such as high power audio, disk head positioners, and other linear circuits.
Key electrical specifications include a maximum collector-emitter voltage of 230V and a continuous collector current rating of 15A, with a peak current capability of 25A. The transistor can dissipate up to 200W of power at 25°C case temperature. It exhibits a typical gain bandwidth product of 30MHz and a minimum DC current gain (hFE) of 50 at 7A and 5V.
This device operates within a temperature range of -65°C to +150°C. It is housed in a TO-247-3 package, suitable for through-hole mounting. The MJW3281AG is designed for reliability and performance in power applications.
Features include low harmonic distortion and a high safe operating area. The complementary PNP transistor is the MJW1302A. Pb-Free packages are available.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJW3281AG is 230 V.
The MJW3281AG has a continuous collector current rating of 15 A.
The maximum power dissipation for the MJW3281AG is 200 W at 25°C.
The operating temperature range for the MJW3281AG is -65°C to +150°C (TJ).
The MJW3281AG is supplied in a TO-247-3 package.
The minimum DC current gain (hFE) for the MJW3281AG is 50 at 7A and 5V.