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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,565 pcs
|
6565 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Cutoff Current | |
| Current | |
| DC Current Gain (Minimum @ IC = 1 Adc, VCE = 5 Vdc) | |
| DC Current Gain (Minimum @ IC = 100 mAdc, VCE = 5 Vdc) | |
| DC Current Gain (Minimum @ IC = 15 Adc, VCE = 5 Vdc) | |
| DC Current Gain (Minimum @ IC = 3 Adc, VCE = 5 Vdc) | |
| DC Current Gain (Minimum @ IC = 5 Adc, VCE = 5 Vdc) | |
| DC Current Gain (Minimum @ IC = 7 Adc, VCE = 5 Vdc) | |
| DC Current Gain (Minimum @ IC = 8 Adc, VCE = 5 Vdc) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current | |
| Frequency | |
| Mounting Type | |
| Operating Junction Temperature Range | |
| Operating Temperature | |
| Power | |
| Power Dissipation Derating | |
| Second Breakdown Current (Minimum @ VCE = 100 Vdc, t = 1 s (non-repetitive) | |
| Second Breakdown Current (Minimum @ VCE = 50 Vdc, t = 1 s (non-repetitive) | |
| Supplier Device Package | |
| Thermal Resistance (Nominal @ Junction-to-Ambient) | |
| Thermal Resistance (Nominal @ Junction-to-Case) | |
| Total Power Dissipation | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| current (Nominal @ Note 1) | |
| voltage (Nominal @ VCBO) | |
| voltage (Nominal @ VCEX) | |
| voltage (Nominal @ VEBO) |
The ON Semiconductor MJW3281A is a high-performance NPN power bipolar transistor. It is designed for demanding applications such as high power audio, disk head positioners, and other linear circuits.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 230Vdc and a continuous collector current (IC) of 15Adc. The transistor can handle a peak collector current of 25Adc and a continuous base current of 1.5Adc. It offers a total power dissipation of 200W at 25°C, with a derating of 1.43W/°C above that temperature.
This device features a typical gain bandwidth product (fT) of 30MHz. The DC current gain (hFE) is a minimum of 50 at 100mAdc and 5Vce, and remains a minimum of 45 at 8Adc and 5Vce. The operating junction temperature range is from -65°C to +150°C.
The MJW3281A is housed in a TO-247-3 package, suitable for through-hole mounting. Its robust construction and specifications make it a reliable choice for power amplification and control circuits requiring significant current and voltage handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJW3281A is 230 Vdc.
The continuous collector current (IC) rating for the MJW3281A is 15 Adc.
The total power dissipation for the MJW3281A is 200 W at 25°C.
The operating junction temperature range for the MJW3281A is -65°C to +150°C.
The MJW3281A is supplied in a TO-247-3 package.
The minimum DC current gain (hFE) for the MJW3281A at 8A and 5Vce is 45.
The typical gain bandwidth product (fT) for the MJW3281A is 30 MHz.