MJW21196G The MJW21196G is an NPN power transistor from On Semiconductor designed for high power audio output, disk head positioners, and linear applications. It offers a 250V collector-emitter voltage and 16A continuous current.
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MJW21196G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJW21196G is an NPN power transistor from On Semiconductor designed for high power audio output, disk head positioners, and linear applications. It offers a 250V collector-emitter voltage and 16A continuous current.
✓ Total Stock: 1,170 pcs
$ Price Range: $0.99

MJW21196G Available from 2 distributors

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1,050 pcs
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120 pcs
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MJW21196G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJW21196G Description

Short technical summary and product information.

The MJW21196G is a silicon NPN power transistor manufactured by On Semiconductor. It utilizes Perforated Emitter technology and is specifically designed for demanding applications such as high power audio output stages, disk head positioners, and general linear applications.

 

This transistor features a maximum collector-emitter voltage (VCEO) of 250 Vdc and a continuous collector current (IC) of 16 Adc, with a peak current capability of 30 Adc. It can handle a total power dissipation of 200 W at a case temperature of 25°C. The DC current gain (hFE) is a minimum of 20 at 8A and 5V, and a minimum of 8 at 16A and 5A.

 

The MJW21196G operates within a junction temperature range of -65°C to +150°C. It is housed in a TO-247-3 package, suitable for through-hole mounting. The device offers excellent gain linearity and a high Safe Operating Area (SOA) of 2.25 A at 80 V for 1 second.

 

Key electrical characteristics include a collector-emitter saturation voltage (VCE(sat)) of 3V maximum at 16A and 3.2A, and a frequency response up to 4MHz. Pb-Free packages are available, indicating compliance with environmental regulations.

MJW21196G Quick Information

Product Type: NPN Power Transistor
Canonical Name: MJW21196G NPN Power Transistor
Subcategory: NPN

MJW21196G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJW21196G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJW21196G Features

  • NPN power transistor for high power audio.
  • 250V collector-emitter voltage rating.
  • 16A continuous collector current.
  • 200W total power dissipation.
  • TO-247-3 through-hole package.

MJW21196G Applications

  • Designed for high power audio output.
  • Suitable for disk head positioners.
  • Ideal for linear applications.
  • Robust SOA for demanding circuits.

MJW21196G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJW21196G?

The maximum collector-emitter voltage (VCEO) for the MJW21196G is 250 Vdc.

What is the continuous collector current rating of the MJW21196G?

The MJW21196G has a continuous collector current (IC) rating of 16 Adc.

What is the power dissipation of the MJW21196G?

The total power dissipation (PD) for the MJW21196G is 200 W at a case temperature of 25°C.

What is the operating temperature range for this transistor?

The operating and storage junction temperature range (TJ, Tstg) for the MJW21196G is -65°C to +150°C.

What package type is the MJW21196G supplied in?

The MJW21196G is supplied in a TO-247-3 package.

What is the DC current gain (hFE) of the MJW21196G?

The DC current gain (hFE) is a minimum of 20 at 8A and 5V, and a minimum of 8 at 16A and 5A.

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