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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,248 pcs
|
3248 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,110 pcs
|
1110 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
68 pcs
|
68 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current - Continuous | |
| Base-Emitter On Voltage | |
| Collector Current - Peak | |
| Collector Cutoff Current | |
| Collector Emitter Saturation Voltage (Maximum @ IC = 16 A, IB = 3.2 A) | |
| Collector Emitter Saturation Voltage (Maximum @ Ic = 8 A, IB = 0.8 A) | |
| Collector-Base Voltage | |
| Collector-Emitter Sustaining Voltage | |
| Current | |
| DC Current Gain (Minimum/Maximum @ IC = 8 A, VCE = 5 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current | |
| Emitter-Base Voltage | |
| Frequency | |
| Gain-Bandwidth Product | |
| Mounting Type | |
| Operating Temperature | |
| Operating and Storage Junction Temperature Range | |
| Pb-Free | |
| Power | |
| Power Dissipation | |
| Power Dissipation Derating | |
| Second Breakdown Collector Current (Minimum @ VCE = 50 Vdc, t = 1 s (non repetitive) | |
| Second Breakdown Collector Current (Minimum @ VCE = 80 Vdc, t = 1 s (non-repetitive) | |
| Supplier Device Package | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Total Power Dissipation | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ON Semiconductor MJW21194G is an NPN silicon power transistor designed for demanding applications such as high power audio output stages, disk head positioners, and linear circuits. It utilizes Perforated Emitter technology for enhanced performance.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 250 Vdc and a continuous collector current (IC) of 16 Adc. The transistor can handle a peak collector current (ICM) of 30 Adc and offers a maximum power dissipation (PD) of 200 W at 25°C case temperature. Its DC current gain (hFE) is a minimum of 20 at 8A and 5V, with a maximum of 80. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 1.4 Vdc at 8A/0.8A and 4Vdc at 16A/3.2A.
This device operates within a junction temperature range of -65°C to +150°C. It is housed in a TO-247-3 package and is designed for through-hole mounting. The MJW21194G is RoHS compliant and suitable for applications requiring robust power handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJW21194G is 250 Vdc.
The continuous collector current (IC) rating for the MJW21194G is 16 Adc.
The MJW21194G has a maximum power dissipation of 200 W at 25°C.
The operating temperature range for the MJW21194G is -65°C to +150°C (TJ).
The MJW21194G is supplied in a TO-247-3 package.
Yes, the MJW21194G is RoHS3 Compliant.