| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9 pcs
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9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor MJW18020G is a planar, high voltage NPN silicon power transistor designed for demanding applications such as motor control, high power supplies, and UPS systems. Its specific design minimizes dead time in bridge configurations due to reproducible DC and switching parameters.
Key electrical specifications include a Collector-Emitter Sustaining Voltage (VCEO(sus)) of 450 Vdc and a Collector-Emitter Breakdown Voltage (VCES) of 1000 Vdc. It can handle a continuous collector current (IC) of 30 A and a peak current of 45 A. The total power dissipation is rated at 250 W at 25°C, with a derating of 2.0 W/°C above that temperature.
Thermal characteristics are important for power applications, with a junction-to-case thermal resistance (RθJC) of 0.5 °C/W. The operating and storage junction temperature range is -65°C to +150°C. The transistor is housed in a TO-247-3 package and is designed for through-hole mounting.
This device offers high and excellent gain linearity, fast and very tight switching times, and very stable leakage current due to its planar structure, contributing to high reliability. The MJW18020G is also available in a Pb-Free package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current is 30 A.
The Collector-Emitter Sustaining Voltage is 450 Vdc.
The operating temperature range is -65°C to 150°C.
The MJW18020G is supplied in a TO-247-3 package.
The MJW18020G is RoHS3 Compliant.