Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9 pcs
|
9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current - Continuous | |
| Base Current - Peak | |
| Collector Current - Continuous | |
| Collector Current - Peak | |
| Collector Cutoff Current | |
| Collector-Base Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Collector-Emitter Sustaining Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current | |
| Emitter-Base Voltage | |
| Frequency | |
| Maximum Lead Temperature for Soldering Purposes | |
| Mounting Type | |
| Operating Temperature | |
| Operating and Storage Junction Temperature Range | |
| Power | |
| Power Dissipation Derating | |
| Supplier Device Package | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Total Power Dissipation | |
| Transistor Type | |
| Vbe(sat) (Maximum @ Ic=10 A, Ib=2 A) | |
| Vbe_sat (Maximum @ IC = 20 A, IB = 4 A) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hfe (Minimum @ IC = 10 mAdc, VCE = 5 Vdc) | |
| hfe (Typical @ IC = 10 A, VCE = 2 V (TC = 125 °C) | |
| hfe (Typical @ IC = 20 A, VCE = 2 V (TC = 125 °C) | |
| hfe (Typical @ IC = 3 A, VCE = 5 V (TC = 125 °C) |
The ON Semiconductor MJW18020G is a planar, high voltage NPN silicon power transistor designed for demanding applications such as motor control, high power supplies, and UPS systems. Its specific design minimizes dead time in bridge configurations due to reproducible DC and switching parameters.
Key electrical specifications include a Collector-Emitter Sustaining Voltage (VCEO(sus)) of 450 Vdc and a Collector-Emitter Breakdown Voltage (VCES) of 1000 Vdc. It can handle a continuous collector current (IC) of 30 A and a peak current of 45 A. The total power dissipation is rated at 250 W at 25°C, with a derating of 2.0 W/°C above that temperature.
Thermal characteristics are important for power applications, with a junction-to-case thermal resistance (RθJC) of 0.5 °C/W. The operating and storage junction temperature range is -65°C to +150°C. The transistor is housed in a TO-247-3 package and is designed for through-hole mounting.
This device offers high and excellent gain linearity, fast and very tight switching times, and very stable leakage current due to its planar structure, contributing to high reliability. The MJW18020G is also available in a Pb-Free package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current is 30 A.
The Collector-Emitter Sustaining Voltage is 450 Vdc.
The operating temperature range is -65°C to 150°C.
The MJW18020G is supplied in a TO-247-3 package.
The MJW18020G is RoHS3 Compliant.