| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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41 pcs
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41 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The ON Semiconductor MJL4281A is a silicon power bipolar transistor designed for high power audio applications. This NPN transistor features a high collector-emitter sustaining voltage of 350V and can handle a continuous collector current of 15A, with a peak current capability of 30A. Its total power dissipation is rated at 230W at 25°C.
Key electrical characteristics include a minimum DC current gain (hFE) of 80 at 5A and 5V, and a low collector-emitter saturation voltage of 1V at 800mA and 8A. The gain linearity is maintained from 100mA to 5A, and it exhibits low harmonic distortion. The transistor operates over a wide temperature range from -65°C to 150°C.
Packaged in a TO-264-3, TO-264AA configuration, the MJL4281A is designed for through-hole mounting. Its high safe operating area and high fT make it suitable for demanding power amplification circuits. The device is also available in Pb-Free packages.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) for the MJL4281A is 350 Vdc.
The MJL4281A transistor has a continuous collector current rating of 15 Adc.
The total power dissipation for the MJL4281A at 25°C is 230 W.
The operating temperature range for the MJL4281A is -65°C to 150°C (TJ).
The MJL4281A is supplied in a TO-264-3, TO-264AA package.
The minimum DC current gain (hFE) of the MJL4281A at 5A and 5V is 80.
The collector-emitter saturation voltage (Vce Sat) for the MJL4281A is a maximum of 1V at 800mA, 8A.