MJL21196G The MJL21196G is an NPN power transistor from On Semiconductor. It offers a 250V collector-emitter voltage and 16A continuous current, suitable for high power audio and linear applications.
Mfr Part #:

MJL21196G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJL21196G is an NPN power transistor from On Semiconductor. It offers a 250V collector-emitter voltage and 16A continuous current, suitable for high power audio and linear applications.
Total Stock: 48 pcs
$ Price Range: $5.08

MJL21196G Available from 1 distributor

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MJL21196G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base-Emitter On Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Leakage Current (Maximum @ VCE = 200 Vdc, IB = 0)
Leakage Current (Maximum @ VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
Leakage Current (Maximum @ VCE = 5 Vdc, IC = 0)
Mounting Type
Operating Temperature
Pb-Free
Power
Second Breakdown Current (Minimum @ VCE = 50 Vdc, t = 1 s (Nonrepetitive)
Second Breakdown Current (Minimum @ VCE = 80 Vdc, t = 1 s (Nonrepetitive)
Supplier Device Package
Thermal Resistance - Junction to Case
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
gain (Minimum @ IC = 16 Adc, IB = 5 Adc)
voltage (Minimum @ IC = 100 mAdc, IB = 0)

MJL21196G Description

Short technical summary and product information.

The MJL21196G is a complementary silicon power transistor from On Semiconductor, designed for high power audio output, disk head positioners, and linear applications. It features a high SOA (Safe Operating Area) and utilizes Perforated Emitter technology.

 

Key electrical specifications include a maximum collector-emitter voltage of 250 Vdc and a continuous collector current of 16 Adc. The device can handle a total power dissipation of 200 W at 25°C case temperature. It exhibits a minimum DC current gain (hFE) of 25 at 8A and 5V, and a maximum base-emitter on voltage of 2.2 Vdc at 8A and 5V.

 

This NPN transistor is housed in a TO-264 package, designed for through-hole mounting. The operating temperature range is -65°C to 150°C (TJ). The device is Pb-Free and RoHS Compliant.

MJL21196G Quick Information

Product Type: Bipolar Transistor
Series: MJL21196G
Canonical Name: MJL21196G NPN Power Transistor
Subcategory: Single

MJL21196G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJL21196G Estimated Pricing

Qty Low High
1+ $5.08 $5.08

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJL21196G Features

  • 250V collector-emitter voltage rating.
  • 16A continuous collector current.
  • 200W total power dissipation.
  • NPN silicon power transistor.
  • TO-264 through-hole package.

MJL21196G Applications

  • Used in high-voltage switching circuits
  • Suitable for power amplifier applications
  • Ideal for motor control modules
  • Applicable in power supply regulation

MJL21196G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJL21196G?

The maximum collector-emitter voltage is 250 Vdc.

What is the continuous collector current rating of the MJL21196G?

The continuous collector current is 16 A.

What is the power dissipation of the MJL21196G at 25°C?

The total power dissipation is 200 W at 25°C case temperature.

What is the operating temperature range for the MJL21196G?

The operating temperature range is -65°C to 150°C (TJ).

What package type is the MJL21196G supplied in?

The MJL21196G is supplied in a TO-264-3, TO-264AA package.

Is the MJL21196G RoHS compliant?

Yes, the MJL21196G is RoHS3 Compliant.

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