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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,377 pcs
|
7377 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request | |
|
248 pcs
|
248 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current - Continuous | |
| Base-Emitter On Voltage | |
| Collector - Emitter Saturation Voltage | |
| Collector Current - Peak | |
| Collector Cutoff Current | |
| Collector-Emitter Sustaining Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| DC Current Gain (Minimum @ 8 A, 5 V) | |
| DC Current Gain (Typical @ 16 A, 5 A) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Derate above 25°C | |
| Emitter Cutoff Current | |
| Emitter-Base Voltage | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Operating and Storage Junction Temperature Range | |
| Pb-Free | |
| Power | |
| Second Breakdown Collector Current Isb (@ VCE = 50 Vdc, t = 1 s (Nonrepetitive) | |
| Second Breakdown Collector Current Isb (@ VCE = 80 Vdc, t = 1 s (Nonrepetitive) | |
| Supplier Device Package | |
| Thermal Resistance - Junction to Case | |
| Total Power Dissipation | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MJL21195G is a PNP silicon power transistor manufactured by ON Semiconductor, utilizing Perforated Emitter technology. It is specifically designed for demanding applications such as high power audio output stages, disk head positioners, and various linear circuits.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 250 Vdc and a continuous collector current (IC) of 16 Adc. The device boasts a high DC current gain (hFE) of 25 minimum at 8A and 5V, and a typical gain of 8.0 at 16A. It can handle a peak collector current (ICM) of 30 Adc and a continuous base current (IB) of 5 Adc. The power dissipation is rated at 200 W at 25°C case temperature, with a derating of 1.43 W/°C above that temperature.
This transistor operates within a junction temperature range of -65°C to +150°C. It features a low junction-to-case thermal resistance of 0.7 °C/W, facilitating efficient heat management. The MJL21195G is housed in a TO-264 package, suitable for through-hole mounting.
Compliance includes RoHS3 compliance and Pb-Free designation. The device is also rated for Moisture Sensitivity Level (MSL) 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJL21195G is 250 Vdc.
The MJL21195G has a continuous collector current rating of 16 Adc.
The total power dissipation for the MJL21195G is 200 W at a case temperature of 25°C.
The operating and storage junction temperature range for the MJL21195G is -65°C to +150°C.
The MJL21195G is supplied in a TO-264-3, TO-264AA package.
The MJL21195G is designed for through-hole mounting.
Yes, the MJL21195G is RoHS3 Compliant.