MJL21194G The MJL21194G is an NPN bipolar power transistor from ON Semiconductor. It is designed for high power audio output, disk head positioners, and linear applications.
Mfr Part #:

MJL21194G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJL21194G is an NPN bipolar power transistor from ON Semiconductor. It is designed for high power audio output, disk head positioners, and linear applications.
Total Stock: 2,924 pcs
$ Price Range: $0.99

MJL21194G Available from 4 distributors

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MJL21194G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current - Continuous
Base-Emitter On Voltage
Collector Current - Peak
Collector Cutoff Current
Collector-Base Voltage
Collector-Emitter Sustaining Voltage
Collector-Emitter Voltage
Current
DC Current Gain (Typical @ IC = 16 Adc, IB = 5 Adc)
DC Current Gain (Typical @ IC = 8 Adc, VCE = 5 Vdc)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cutoff Current
Emitter-Base Voltage
Frequency
Mounting Type
Operating Temperature
Pb-Free
Power
Power Dissipation Derating
Second Breakdown Collector Current (Minimum @ VCE = 50 Vdc, t = 1 s (non repetitive)
Second Breakdown Collector Current (Minimum @ VCE = 80 Vdc, t = 1 s (non-repetitive)
Supplier Device Package
Thermal Resistance - Junction to Case
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJL21194G Description

Short technical summary and product information.

The ON Semiconductor MJL21194G is an NPN silicon power transistor designed for high power audio output, disk head positioners, and linear applications. It features a maximum collector-emitter voltage (VCEO) of 250 Vdc and a continuous collector current (IC) of 16 Adc.

 

This transistor offers a total power dissipation of 200 W at 25°C case temperature and has a high DC current gain (hFE) characterized at 25 (typical) for 8A collector current. The operating temperature range is -65°C to 150°C.

 

The MJL21194G comes in a TO-264 package, suitable for through-hole mounting. It is designed with Perforated Emitter technology and is Pb-Free and RoHS compliant.

 

Key electrical characteristics include a collector-base voltage (VCBO) of 400 Vdc, a peak collector current (ICM) of 30 Adc, and a gain bandwidth product (fT) of 4 MHz. The thermal resistance from junction to case is a low 0.7 °C/W.

MJL21194G Quick Information

Product Type: Bipolar Transistor
Series: MJL21194
Canonical Name: MJL21194G NPN Power Transistor
Subcategory: NPN

MJL21194G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJL21194G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJL21194G Features

  • NPN silicon power transistor for audio output.
  • 250 V collector-emitter voltage rating.
  • 16 A continuous collector current capability.
  • 200 W total power dissipation.
  • TO-264 package for through-hole mounting.

MJL21194G Applications

  • High-voltage power switching circuits
  • Motor control and drives
  • High-power audio amplifiers
  • Industrial power supplies

MJL21194G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJL21194G?

The maximum collector-emitter voltage (VCEO) for the MJL21194G is 250 Vdc.

What is the continuous collector current rating of the MJL21194G?

The MJL21194G has a continuous collector current rating of 16 Adc.

What is the power dissipation of the MJL21194G?

The total power dissipation for the MJL21194G is 200 W at a case temperature of 25°C.

What is the operating temperature range for the MJL21194G?

The operating and storage junction temperature range for the MJL21194G is -65°C to 150°C.

What package type is the MJL21194G supplied in?

The MJL21194G is supplied in a TO-264 package.

Is the MJL21194G RoHS compliant?

Yes, the MJL21194G is RoHS3 compliant.

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