| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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175 pcs
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175 pcs | On Request | 1 | On Request | On Request | 752 | On Request | On Request | |
|
25 pcs
|
25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor MJL21193G is a PNP silicon power transistor designed for demanding applications such as high power audio output stages, disk head positioners, and general linear power applications. It utilizes Perforated Emitter technology for enhanced performance.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 250 Vdc and a continuous collector current (IC) of 16 Adc, with a peak current capability (ICM) of 30 Adc. The device offers a high DC current gain (hFE) of 25 minimum at 8A and 5V, and a maximum power dissipation (PD) of 200W at 25°C.
This transistor operates within a wide temperature range from -65°C to +150°C. It is housed in a TO-264 package, suitable for through-hole mounting. The MJL21193G is Pb-Free and RoHS Compliant, making it suitable for modern electronic designs.
Its excellent gain linearity and high Safe Operating Area (SOA) make it a reliable choice for power amplification and control circuits requiring robust performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJL21193G is 250 Vdc.
The continuous collector current (IC) rating for the MJL21193G is 16 Adc.
The total power dissipation (PD) for the MJL21193G at 25°C is 200 W.
The operating and storage junction temperature range (TJ, Tstg) for the MJL21193G is -65°C to +150°C.
The MJL21193G is supplied in a TO-264 package.
Yes, the MJL21193G is Pb-Free and RoHS Compliant.