MJH11022G The MJH11022G is an NPN Darlington silicon power transistor from ON Semiconductor. It features a high DC current gain and is designed for general purpose amplification and switching applications.
Mfr Part #:

MJH11022G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJH11022G is an NPN Darlington silicon power transistor from ON Semiconductor. It features a high DC current gain and is designed for general purpose amplification and switching applications.
Total Stock: 13,911 pcs
$ Price Range: $0.99

MJH11022G Available from 1 distributor

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MJH11022G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Collector Current - Peak
Collector Emitter Sustaining Voltage (Minimum @ MJH 11018, MJH 11017)
Collector Emitter Sustaining Voltage (Minimum @ MJH 11020, MJH 11019)
Collector Emitter Sustaining Voltage (Minimum @ MJH 11022, MJH 11021)
Collector-Base Voltage (Minimum @ MJH 11018, MJH 11017)
Collector-Base Voltage (Minimum @ MJH 11020, MJH 11019)
Collector-Base Voltage (Minimum @ MJH 11022, MJH 11021)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Derate above 25°C
Emitter-Base Voltage
Frequency
Low Collector-Emitter Saturation Voltage (Typical @ IC = 10 A)
Low Collector-Emitter Saturation Voltage (Typical @ IC = 5.0 A)
Mounting Type
Operating Temperature
Operating and Storage Junction Temperature Range
Power
Supplier Device Package
Thermal Resistance - Junction to Case
Total Device Dissipation
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJH11022G Description

Short technical summary and product information.

The ON Semiconductor MJH11022G is an NPN Darlington silicon power transistor designed for general purpose amplifiers, low frequency switching, and motor control applications. It offers a high DC current gain of 400 minimum at 10 Adc and a collector-emitter sustaining voltage of 250 Vdc.

 

Key electrical characteristics include a continuous collector current of 15 A and a peak current of 30 A. The device has a total power dissipation of 150 W at 25°C and a low collector-emitter saturation voltage of 1.8 V typical at 10 A.

 

This transistor is housed in a TO-247-3 package, suitable for through-hole mounting. The operating and storage junction temperature range is from -65°C to 150°C, with a thermal resistance from junction to case of 0.83 °C/W.

MJH11022G Quick Information

Product Type: NPN Darlington Power Transistor
Canonical Name: MJH11022G NPN Darlington Silicon Power Transistor
Subcategory: Single

MJH11022G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MJH11022G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJH11022G Features

  • High DC current gain of 400 minimum.
  • Collector-emitter voltage rating of 250 Vdc.
  • Continuous collector current of 15 A.
  • 150 W total power dissipation.
  • TO-247-3 package for through-hole mounting.

MJH11022G Applications

  • General purpose amplifier applications.
  • Low frequency switching circuits.
  • Motor control applications.
  • Power supply circuits.

MJH11022G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating for the MJH11022G?

The collector-emitter voltage rating for the MJH11022G is 250 Vdc.

What is the continuous collector current of the MJH11022G?

The continuous collector current for the MJH11022G is 15 A.

What is the power dissipation of the MJH11022G?

The total device dissipation for the MJH11022G is 150 W at 25°C.

What is the operating temperature range for the MJH11022G?

The operating temperature range for the MJH11022G is -65°C to 150°C (TJ).

What package type is the MJH11022G available in?

The MJH11022G is available in a TO-247-3 package.

What is the DC current gain (hFE) of the MJH11022G?

The DC current gain (hFE) of the MJH11022G is a minimum of 400 at 10A collector current and 5V collector-emitter voltage.

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