| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor MJH11021 is a PNP Darlington silicon power transistor. It is designed for use in general purpose amplifiers, low frequency switching, and motor control applications. This device features a high DC current gain (hFE) of 400 minimum at 10 Adc and a collector-emitter sustaining voltage (VCEO(sus)) of 250 Vdc.
The MJH11021 has a continuous collector current rating of 15 A and a peak current rating of 30 A. Its low collector-emitter saturation voltage (VCE(sat)) is 1.8 V typical at 10 A. The total device dissipation is rated at 150 W at 25°C case temperature.
This transistor is housed in a TO-218-3 package (SOT-93) and is suitable for through-hole mounting. The operating and storage junction temperature range is -65°C to 150°C. It is also RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage for the MJH11021 is 250 Vdc.
The continuous collector current rating for the MJH11021 is 15 A.
The DC current gain (hFE) of the MJH11021 is a minimum of 400 at 10A collector current and 5V collector-emitter voltage.
The total device dissipation for the MJH11021 is 150 W at a case temperature of 25°C.
The operating and storage junction temperature range for the MJH11021 is -65°C to 150°C.
The MJH11021 is supplied in a TO-218-3 package.