| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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32 pcs
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32 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor MJH11019 is a PNP Darlington silicon power transistor. It is designed for use as general purpose amplifiers, low frequency switching, and motor control applications. This device features a high DC current gain of 400 minimum at 10 Adc and a collector-emitter sustaining voltage of 200 Vdc.
The MJH11019 has a maximum continuous collector current of 15 A and a peak current of 30 A. It can dissipate up to 150 W of power at a case temperature of 25°C. The transistor operates within a junction temperature range of -65°C to 150°C.
Packaged in a TO-218-3 (SOT-93) case, the MJH11019 is designed for through-hole mounting. Its low collector-emitter saturation voltage, 1.2 V typical at 5.0 A and 1.8 V typical at 10 A, makes it suitable for efficient power switching.
This device is Pb-Free and RoHS3 Compliant, indicating adherence to environmental standards. The MJH11019 is a complementary part to NPN transistors like the MJH11020.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage for the MJH11019 is 200 Vdc.
The continuous collector current rating for the MJH11019 is 15 A.
The power dissipation of the MJH11019 is 150 W at a case temperature of 25°C.
The operating temperature range for the MJH11019 is -65°C to 150°C.
The MJH11019 is supplied in a TO-218-3 package.
The MJH11019 is RoHS3 Compliant.