MJH11017G The ON Semiconductor MJH11017G is a PNP Darlington power transistor designed for general purpose amplification, low frequency switching, and motor control applications. It offers a 150V collector-emitter voltage and 15A continuous collector current.
Mfr Part #:

MJH11017G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MJH11017G is a PNP Darlington power transistor designed for general purpose amplification, low frequency switching, and motor control applications. It offers a 150V collector-emitter voltage and 15A continuous collector current.
Total Stock: 635 pcs
$ Price Range: $0.99

MJH11017G Available from 1 distributor

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MJH11017G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Collector-Emitter Sustaining Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Thermal Resistance - Junction to Case
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Vce Saturation (Typical @ @ IC = 10 A)
Voltage
current (@ Peak (Note 1)

MJH11017G Description

Short technical summary and product information.

The ON Semiconductor MJH11017G is a PNP Darlington silicon power transistor. It is designed for use in general purpose amplifiers, low frequency switching, and motor control applications. This device features a high DC current gain of 400 minimum at 10 Adc.

 

The transistor has a collector-emitter sustaining voltage of 150 Vdc and a continuous collector current rating of 15 A, with a peak current capability of 30 A. The total device dissipation is 150 W at a case temperature of 25°C. Saturation voltage is typically 1.2 V at 5.0 A and 1.8 V at 10 A.

 

Packaged in a TO-247-3 through-hole configuration, the MJH11017G operates within a junction temperature range of -65°C to 150°C. Its thermal resistance from junction to case is 0.83 °C/W.

 

This device is Pb-Free and RoHS3 compliant, with REACH unaffected status and MSL 1. It is suitable for applications requiring robust power handling and amplification capabilities.

MJH11017G Quick Information

Product Type: PNP Darlington Power Transistor
Canonical Name: MJH11017G PNP Darlington Power Transistor
Subcategory: Bipolar (BJT) - Single

MJH11017G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJH11017G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJH11017G Features

  • PNP Darlington silicon power transistor.
  • 150V collector-emitter sustaining voltage.
  • 15A continuous collector current.
  • 150W total device dissipation.
  • TO-247-3 through-hole package.

MJH11017G Applications

  • Suitable for low frequency switching applications.
  • Ideal for motor control circuits.
  • Used in general purpose amplifiers.
  • Applicable in high voltage switching environments.
  • Suitable for power regulation and control.

MJH11017G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating for the MJH11017G?

The collector-emitter sustaining voltage is 150 Vdc minimum.

What is the continuous collector current for the MJH11017G?

The continuous collector current is 15 A.

What is the power dissipation of the MJH11017G transistor?

The total device dissipation is 150 W at a case temperature of 25°C.

What is the operating temperature range for the MJH11017G?

The operating and storage junction temperature range is -65°C to 150°C.

What is the package type for the MJH11017G?

The MJH11017G is supplied in a TO-247-3 package.

What is the DC current gain (hFE) of the MJH11017G?

The DC current gain is a minimum of 400 at 10 Adc.

What is the typical saturation voltage for the MJH11017G at 5A?

The typical collector-emitter saturation voltage is 1.2 V at an IC of 5.0 A.

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