| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MJF6668G is a PNP type Darlington transistor manufactured by On Semiconductor, designed for general-purpose amplifiers and switching applications. It features an isolated overmold package, eliminating the need for isolating washers and reducing system cost.
This transistor offers a high DC current gain and a collector-emitter voltage rating of 100V, with a continuous collector current of 10A. The peak collector current is rated at 15A. It has a maximum power dissipation of 40W at 25°C case temperature and 2W at 25°C ambient temperature.
The operating and storage temperature range is from -65°C to 150°C. The MJF6668G is electrically similar to popular devices like the 2N6388 and TIP107. It is suitable for applications requiring high isolation voltage, with a UL recognized isolation voltage of 3500 VRMS.
The device is supplied in a TO-220FP package, which is through-hole mounted. It is Pb-Free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 100 Vdc.
The continuous collector current is 10 Adc.
The operating and storage temperature range is -65°C to 150°C.
The MJF6668G is supplied in a TO-220FP package.
Yes, the MJF6668G is RoHS3 Compliant.