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MJF45H11G The ON Semiconductor MJF45H11G is a PNP bipolar transistor designed for general purpose power amplification and switching applications. It features an 80V collector-emitter voltage and 10A continuous current capability.
Mfr Part #:

MJF45H11G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MJF45H11G is a PNP bipolar transistor designed for general purpose power amplification and switching applications. It features an 80V collector-emitter voltage and 10A continuous current capability.
✓ Total Stock: 21,620 pcs
$ Price Range: $0.99

MJF45H11G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
20,570 pcs
On Request
20570 pcs On Request 1 On Request On Request On Request On Request On Request
Flip Electronics ✓
Non-Authorised Inventory information
1,050 pcs
On Request
1050 pcs On Request 1 On Request On Request On Request On Request On Request
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MJF45H11G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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MJF45H11G Description

Short technical summary and product information.

The ON Semiconductor MJF45H11G is a PNP bipolar junction transistor (BJT) designed for general purpose power amplification and switching applications. It is suitable for use in output or driver stages of switching regulators, converters, and power amplifiers.

 

Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 10A. The transistor offers a low collector-emitter saturation voltage (VCE(sat)) of 1V at 8A and a minimum DC current gain (hFE) of 40 at 4A and 1V. Its gain bandwidth product (fT) is 40MHz.

 

This device operates within a junction temperature range of -55°C to 150°C. It is housed in a TO-220FP package and supports through-hole mounting. The thermal resistance from junction to case is 3.5°C/W, and from junction to ambient is 62.5°C/W.

 

The MJF45H11G is part of a complementary pair, simplifying design efforts when paired with its NPN counterpart, the MJF44H11. The 'G' suffix indicates a Pb-Free package.

MJF45H11G Quick Information

Product Type: Bipolar Transistor
Canonical Name: MJF45H11G PNP Bipolar Transistor
Subcategory: Single

MJF45H11G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJF45H11G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJF45H11G Features

  • PNP bipolar transistor for power applications.
  • 80V collector-emitter voltage rating.
  • 10A continuous collector current.
  • Low saturation voltage of 1V.
  • TO-220FP package with through-hole mounting.

MJF45H11G Applications

  • General purpose power amplification.
  • Switching regulator output stages.
  • Power converter driver stages.
  • Complementary pair designs.

MJF45H11G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJF45H11G?

The maximum collector-emitter voltage (VCEO) for the MJF45H11G is 80 Vdc.

What is the continuous collector current rating of the MJF45H11G?

The continuous collector current (IC) rating for the MJF45H11G is 10 Adc.

What is the operating temperature range for the MJF45H11G?

The operating and storage junction temperature range for the MJF45H11G is -55°C to 150°C.

What package type is the MJF45H11G supplied in?

The MJF45H11G is supplied in a TO-220-3 Full Pack package.

What is the DC current gain (hFE) of the MJF45H11G at 4A?

The minimum DC current gain (hFE) for the MJF45H11G at 4A and 1V is 40.

What is the collector-emitter saturation voltage for the MJF45H11G?

The collector-emitter saturation voltage (VCE(sat)) for the MJF45H11G is a maximum of 1V at 8A.

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