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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20,570 pcs
|
20570 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,050 pcs
|
1050 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Capacitance | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Gain Bandwidth Product (Typical @ IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) | |
| Mounting Type | |
| Operating Temperature | |
| Operating and Storage Junction Temperature Range | |
| Power | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Supplier Device Package | |
| Thermal Resistance (Maximum @ Junction to case) | |
| Thermal Resistance (Maximum @ Junction-to-Ambient) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| current (Maximum @ Peak) | |
| current (Maximum @ VCE = Rated VCEO, VBE = 0) | |
| current (Maximum @ VEB = 5 Vdc) | |
| gain (Minimum @ VCE = 1 Vdc, IC = 2 Adc) | |
| gain (Minimum @ VCE = 1 Vdc, IC = 4 Adc) | |
| voltage (Maximum @ @ Ib, Ic) | |
| voltage (Maximum @ IC = 8 Adc, IB = 0.4 Adc) | |
| voltage (Maximum @ IC = 8 Adc, IB = 0.8 Adc) | |
| voltage (Minimum @ IC = 30 mA, IB = 0) |
The ON Semiconductor MJF45H11G is a PNP bipolar junction transistor (BJT) designed for general purpose power amplification and switching applications. It is suitable for use in output or driver stages of switching regulators, converters, and power amplifiers.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 10A. The transistor offers a low collector-emitter saturation voltage (VCE(sat)) of 1V at 8A and a minimum DC current gain (hFE) of 40 at 4A and 1V. Its gain bandwidth product (fT) is 40MHz.
This device operates within a junction temperature range of -55°C to 150°C. It is housed in a TO-220FP package and supports through-hole mounting. The thermal resistance from junction to case is 3.5°C/W, and from junction to ambient is 62.5°C/W.
The MJF45H11G is part of a complementary pair, simplifying design efforts when paired with its NPN counterpart, the MJF44H11. The 'G' suffix indicates a Pb-Free package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJF45H11G is 80 Vdc.
The continuous collector current (IC) rating for the MJF45H11G is 10 Adc.
The operating and storage junction temperature range for the MJF45H11G is -55°C to 150°C.
The MJF45H11G is supplied in a TO-220-3 Full Pack package.
The minimum DC current gain (hFE) for the MJF45H11G at 4A and 1V is 40.
The collector-emitter saturation voltage (VCE(sat)) for the MJF45H11G is a maximum of 1V at 8A.