MJF2955G The MJF2955G is a PNP power transistor from ON Semiconductor designed for general purpose amplifier and switching applications. It offers a 90V collector-emitter voltage and 10A continuous collector current.
Mfr Part #:

MJF2955G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJF2955G is a PNP power transistor from ON Semiconductor designed for general purpose amplifier and switching applications. It offers a 90V collector-emitter voltage and 10A continuous collector current.
Total Stock: 3,304 pcs
$ Price Range: $0.99

MJF2955G Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,150 pcs
3150 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
154 pcs
154 pcs On Request 1 On Request On Request 07+ On Request On Request

MJF2955G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Temperature for Soldering Purposes
Mounting Type
Operating Temperature
Power
Power Dissipation (Nominal @ TC=25 °C)
Power Dissipation (Nominal @ Ta = 25 °C)
RMS Isolation Voltage
Supplier Device Package
Thermal Resistance (Maximum @ Note 2)
Thermal Resistance (Maximum)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJF2955G Description

Short technical summary and product information.

The MJF2955G is a PNP bipolar junction transistor manufactured by ON Semiconductor. It is specifically designed for general purpose amplifier and switching applications. This transistor features a collector-emitter sustaining voltage of 90V and a continuous collector current rating of 10A.

 

The device is housed in a TO-220FP package, suitable for through-hole mounting. It operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a minimum DC current gain (hFE) of 20 at 4A and 4V, and a Vce saturation of 2.5V at 3.3A and 10A. The transistor has a frequency response up to 2MHz.

 

Additional features include an isolated overmold package with 1500V RMS minimum isolation and UL recognition to 3500 VRMS. The epoxy material meets UL 94 V-0 standards. This component is electrically similar to the MJE3055T and MJE2955T series.

MJF2955G Quick Information

Product Type: PNP Power Transistor
Canonical Name: MJF2955G PNP Power Transistor
Subcategory: PNP

MJF2955G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJF2955G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJF2955G Features

  • PNP power transistor for general applications.
  • 90V collector-emitter sustaining voltage.
  • 10A continuous collector current rating.
  • TO-220FP through-hole package.
  • Wide -55°C to 150°C operating temperature.

MJF2955G Applications

  • Suitable for high-voltage switching circuits
  • Used in power amplification applications
  • Ideal for automotive and industrial controls
  • Supports electrical isolation in complex systems

MJF2955G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter sustaining voltage for the MJF2955G?

The collector-emitter sustaining voltage (VCEO(sus)) for the MJF2955G is 90Vdc.

What is the continuous collector current of the MJF2955G transistor?

The continuous collector current (IC) for the MJF2955G is 10 Adc.

What is the operating temperature range for the MJF2955G?

The operating and storage temperature range for the MJF2955G is -55°C to +150°C.

What package type is the MJF2955G supplied in?

The MJF2955G is supplied in a TO-220FP package.

What is the power dissipation of the MJF2955G at 25°C ambient temperature?

The total power dissipation for the MJF2955G at an ambient temperature of 25°C is 2W.

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