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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,413 pcs
|
2413 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
568 pcs
|
568 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector-Emitter Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MJF127G is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for switching and amplification applications requiring high voltage and current handling. The device features a collector-emitter voltage (VCEO) of 100V and a collector current of 5A. The package type is TO220FP, suitable for through-hole mounting on printed circuit boards. This transistor is used in power regulation, switching circuits, and amplification stages where high voltage operation is necessary.
The device's specifications include a maximum collector-emitter voltage of 100V, making it suitable for high-voltage applications. Its package allows for efficient heat dissipation and ease of mounting in various electronic assemblies. The transistor's electrical characteristics make it appropriate for use in power supplies, motor control, and other high-current, high-voltage circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) of the MJF127G is 100V.