MJE803G The ON Semiconductor MJE803G is an NPN Darlington power transistor designed for general-purpose amplifier and low-speed switching applications. It offers a high DC current gain and a 40W power dissipation.
Mfr Part #:

MJE803G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MJE803G is an NPN Darlington power transistor designed for general-purpose amplifier and low-speed switching applications. It offers a high DC current gain and a 40W power dissipation.
Total Stock: 1,718 pcs
$ Price Range: $0.99

MJE803G Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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1,718 pcs
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MJE803G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Cutoff Current
Collector-Emitter Breakdown Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cutoff Current
Mounting Type
Operating Temperature
Power
Supplier Device Package
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Total Power Dissipation
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
hfe (Minimum @ IC = 1.5 Adc, VCE = 3.0 Vdc)
hfe (Typical @ IC = 2.0 Adc)

MJE803G Description

Short technical summary and product information.

The ON Semiconductor MJE803G is a complementary silicon power transistor featuring a Darlington configuration. It is designed for general-purpose amplifier and low-speed switching applications. This NPN transistor boasts a high DC current gain, with a typical hFE of 2000 at 2.0 Adc. It can handle a collector current of up to 4A and has a collector-emitter voltage (VCEO) of 80V.

 

The device is rated for a total power dissipation of 40W at 25°C and operates within a junction temperature range of -55°C to 150°C. The MJE803G is housed in a TO-225AA or TO-126-3 package, suitable for through-hole mounting.

 

Key electrical characteristics include a Vce saturation of 2.8V maximum at 40mA base current and 2A collector current. The transistor also features built-in base-emitter resistors to limit leakage and multiplication. It is Pb-Free and RoHS Compliant.

MJE803G Quick Information

Product Type: NPN Darlington Power Transistor
Canonical Name: MJE803G NPN Darlington Power Transistor
Subcategory: Bipolar (BJT) - Single

MJE803G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MJE803G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJE803G Features

  • NPN Darlington power transistor.
  • High DC current gain (hFE) up to 2000.
  • Rated for 80V collector-emitter voltage.
  • Handles up to 4A collector current.
  • 40W total power dissipation.

MJE803G Applications

  • General-purpose amplifier applications.
  • Low-speed switching applications.
  • Power supply circuits.
  • Motor control circuits.

MJE803G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJE803G?

The maximum collector-emitter voltage (VCEO) for the MJE803G is 80 Vdc.

What is the maximum continuous collector current for the MJE803G?

The maximum continuous collector current (IC) for the MJE803G is 4 Adc.

What is the power dissipation rating of the MJE803G transistor?

The MJE803G has a total power dissipation rating of 40 W at 25°C.

What is the operating temperature range for the MJE803G?

The operating and storage junction temperature range for the MJE803G is -55°C to 150°C.

What is the package type for the MJE803G?

The MJE803G is available in a TO-225AA or TO-126-3 package.

What is the RoHS status of the MJE803G?

The MJE803G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the MJE803G?

The Moisture Sensitivity Level (MSL) for the MJE803G is 1.

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