Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20,000 pcs
|
20000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Collector Current | |
| Collector Cutoff Current | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Operating and Storage Junction Temperature Range | |
| Power | |
| Supplier Device Package | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Total Power Dissipation | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MJE802G is a complementary silicon power transistor from ON Semiconductor, featuring an NPN Darlington configuration. It is designed for general-purpose amplifier and low-speed switching applications. This device boasts a high DC current gain (hFE) of 750 minimum at 1.5A and 3V, and a maximum collector current of 4A.
With a maximum collector-emitter breakdown voltage of 80V, the MJE802G is suitable for various power applications. It has a total power dissipation of 40W at 25°C and operates within a junction temperature range of -55°C to +150°C. The transistor is housed in a TO-225AA, TO-126-3 package and is designed for through-hole mounting.
Key electrical characteristics include a Vce saturation of 2.5V maximum at 30mA collector current and 1.5A base current. The device also features built-in base-emitter resistors to limit leakage. It is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MJE802G has a maximum collector-emitter breakdown voltage of 80 Vdc.
The MJE802G has a continuous collector current rating of 4 A.
The MJE802G has a total power dissipation of 40 W at 25°C.
The operating and storage junction temperature range for the MJE802G is -55°C to +150°C.
The MJE802G is available in a TO-225AA, TO-126-3 package.
The MJE802G is designed for through-hole mounting.
The MJE802G has a minimum DC current gain (hFE) of 750 at 1.5A collector current and 3V Vce.