| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,477 pcs
|
2477 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MJE800STU is an NPN Epitaxial Silicon Darlington Transistor manufactured by ON Semiconductor. This component is designed for power applications, offering a high DC current gain of 750 minimum at 1.5A and 3V.
Key electrical specifications include a collector-emitter breakdown voltage of 60V (for MJE800/801 series) and a maximum collector current of 4A. The transistor can dissipate up to 40W of power at 25°C case temperature. Its collector-emitter saturation voltage is a maximum of 2.5V at 1.5A collector current and 30mA base current.
The MJE800STU is housed in a TO-126-3 package, suitable for through-hole mounting. The operating junction temperature is rated up to 150°C.
This transistor is a complement to the MJE700/701/702/703 series and features monolithic construction with built-in base-emitter resistors.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 60V.
The maximum collector current is 4A.
The power dissipation is 40W.
The operating temperature is up to 150°C (TJ).
The MJE800STU is available in a TO-126-3 package.
The minimum DC Current Gain (hFE) is 750 at 1.5A collector current and 3V collector-emitter voltage.