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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,477 pcs
|
2477 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Base Emitter On Voltage (Maximum @ ALL DEVICES, VCE = 3 V, IC = 4 A) | |
| Base Emitter On Voltage (Maximum @ MJE 800/802, VCE = 3 V, IC = 1.5 A) | |
| Base Emitter On Voltage (Maximum @ MJE 801/803, VCE = 3 V, IC = 2 A) | |
| Collector Current (Maximum) | |
| Collector Cutoff Current (@ MJE 800/801, VCE = 60 V, IB = 0) | |
| Collector Cutoff Current (@ MJE 802/803, VCE = 80 V, IB = 0) | |
| Collector Cutoff Current (@ V CB = Rated BVCEO, IE = 0) | |
| Collector Cutoff Current (@ V CB = Rated BVCEO, IE = 0, TC = 100 °C) | |
| Collector Cutoff Current (Maximum) | |
| Collector Dissipation | |
| Collector Emitter Breakdown Voltage (@ MJE 800/801, IC = 50 mA, IB = 0) | |
| Collector Emitter Breakdown Voltage (@ MJE 802/803, IC = 50 mA, IB = 0) | |
| Collector Emitter Breakdown Voltage (Maximum) | |
| Collector Emitter Saturation Voltage (Maximum @ ALL DEVICES, IC = 4 A, IB = 40 mA) | |
| Collector Emitter Saturation Voltage (Maximum @ MJE 800/802, IC = 1.5 A, IB = 30 mA) | |
| Collector Emitter Saturation Voltage (Maximum @ MJE 801/803, IC = 2 A, IB = 40 mA) | |
| Collector Emitter Voltage (@ MJE 800/801) | |
| Collector Emitter Voltage (@ MJE 802/803) | |
| Current | |
| DC Current Gain (Minimum @ ALL DEVICES, VCE = 3 V, IC = 4 A) | |
| DC Current Gain (Minimum @ MJE 800/802, VCE = 3 V, IC = 1.5 A) | |
| DC Current Gain (Minimum @ MJE 801/803, VCE = 3 V, IC = 2 A) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cut-off Current | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MJE800STU is an NPN Epitaxial Silicon Darlington Transistor manufactured by ON Semiconductor. This component is designed for power applications, offering a high DC current gain of 750 minimum at 1.5A and 3V.
Key electrical specifications include a collector-emitter breakdown voltage of 60V (for MJE800/801 series) and a maximum collector current of 4A. The transistor can dissipate up to 40W of power at 25°C case temperature. Its collector-emitter saturation voltage is a maximum of 2.5V at 1.5A collector current and 30mA base current.
The MJE800STU is housed in a TO-126-3 package, suitable for through-hole mounting. The operating junction temperature is rated up to 150°C.
This transistor is a complement to the MJE700/701/702/703 series and features monolithic construction with built-in base-emitter resistors.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 60V.
The maximum collector current is 4A.
The power dissipation is 40W.
The operating temperature is up to 150°C (TJ).
The MJE800STU is available in a TO-126-3 package.
The minimum DC Current Gain (hFE) is 750 at 1.5A collector current and 3V collector-emitter voltage.