MJE702G The ON Semiconductor MJE702G is a PNP Darlington power transistor designed for general-purpose amplifier and low-speed switching applications. It features a high DC current gain and a 40W power rating.
Mfr Part #:

MJE702G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MJE702G is a PNP Darlington power transistor designed for general-purpose amplifier and low-speed switching applications. It features a high DC current gain and a 40W power rating.
Total Stock: 1,000 pcs
$ Price Range: $0.99

MJE702G Available from 1 distributor

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MJE702G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Collector Cutoff Current
Collector-Emitter Breakdown Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cutoff Current
Mounting Type
Operating Temperature
Power
Supplier Device Package
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Total Power Dissipation
Transistor Type
Vce Saturation (Max)
Vce Saturation (Max) @ Ib, Ic
Voltage
hfe (Minimum @ IC = 1.5 A, VCE = 3 V)
hfe (Typical @ IC = 2.0 Adc)

MJE702G Description

Short technical summary and product information.

The ON Semiconductor MJE702G is a complementary silicon power transistor belonging to the Darlington family. It is designed for general-purpose amplifier and low-speed switching applications. This PNP transistor offers a high DC current gain (hFE) of 750 minimum at 1.5A and 3V, with a typical gain of 2000 at 2.0A.

 

Key electrical characteristics include a collector-emitter voltage (VCEO) of 80V, a continuous collector current (IC) of 4A, and a maximum power dissipation (PD) of 40W at 25°C. The Vce saturation voltage is a maximum of 2.5V at 30mA base current and 1.5A collector current.

 

This device is housed in a TO-126 package and supports through-hole mounting. It operates within a junction temperature range of -55°C to +150°C. The transistor is Pb-free and RoHS compliant, making it suitable for various electronic designs requiring robust power handling capabilities.

MJE702G Quick Information

Product Type: Power Transistor
Canonical Name: MJE702G PNP Darlington Power Transistor
Subcategory: Single

MJE702G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MJE702G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJE702G Features

  • PNP Darlington silicon power transistor
  • High DC current gain up to 2000 (Typ)
  • 80V collector-emitter voltage rating
  • 4A continuous collector current
  • 40W power dissipation in TO-126 package

MJE702G Applications

  • Suitable for high-voltage switching circuits
  • Used in power amplification applications
  • Ideal for automotive and industrial electronics
  • Applicable in relay driver circuits

MJE702G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJE702G?

The maximum collector-emitter voltage (VCEO) for the MJE702G is 80 Vdc.

What is the continuous collector current rating of the MJE702G?

The MJE702G has a continuous collector current (IC) rating of 4 A.

What is the power dissipation of the MJE702G transistor?

The total power dissipation for the MJE702G is 40 W at 25°C.

What is the operating temperature range for the MJE702G?

The MJE702G can operate within a temperature range of -55°C to +150°C (TJ).

What is the package type for the MJE702G?

The MJE702G is available in a TO-225AA, TO-126-3 package.

Is the MJE702G RoHS compliant?

Yes, the MJE702G is RoHS3 Compliant.

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