| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
86 pcs
|
86 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The MJE700G is a PNP Darlington power transistor manufactured by International Rectifier, suitable for general-purpose amplifier and low-speed switching applications. It features a high DC current gain and monolithic construction with built-in base-emitter resistors. The transistor is rated for a collector-emitter voltage of 60V and a continuous collector current of 4A. Its total power dissipation is 40W at 25°C case temperature.
The device comes in a TO-225-3 package, identified by case outline 77-09. It is designed for through-hole mounting. The operating and storage junction temperature range is from -55°C to +150°C.
This transistor is Pb-free and RoHS compliant, making it suitable for modern electronic designs requiring environmentally conscious components. Its complementary silicon power transistor counterpart is the MJE800G series (NPN).
Key electrical characteristics include a maximum collector-emitter saturation voltage of 2.5V and a maximum base current of 0.1A. The thermal resistance from junction to case is 3.12°C/W, and from junction to ambient is 83.3°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJE700G is 60 Vdc.
The MJE700G has a continuous collector current (IC) rating of 4.0 Adc.
The total power dissipation (PD) for the MJE700G is 40 W at 25°C.
The operating and storage junction temperature range for the MJE700G is -55°C to +150°C.
The MJE700G is supplied in a TO-225-3 package.
Yes, the MJE700G is RoHS3 Compliant.