| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,470 pcs
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1470 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
344 pcs
|
344 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
300 pcs
|
300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MJE5852G is a PNP silicon power transistor manufactured by On Semiconductor, designed for high-voltage, high-speed power switching in inductive circuits where fall time is critical. It is particularly suited for line-operated switch-mode applications.
Key electrical specifications include a collector-emitter sustaining voltage (VCEO(sus)) of 400V, a continuous collector current (IC) of 8A, and a peak collector current (ICM) of 16A. The device can handle a total power dissipation (PD) of 80W at 25°C. Its operating junction temperature range is -65°C to 150°C.
This transistor is complementary to the MJE13007 series and is available in a TO-220 package. It is suitable for applications such as switching regulators, inverters, solenoid and relay drivers, motor controls, and deflection circuits. The device is Pb-Free and RoHS compliant.
Mounting is via through-hole. The TO-220 package is standard for power applications requiring moderate heat dissipation. The operating temperature range is -65°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MJE5852G has a collector-emitter sustaining voltage (VCEO(sus)) of 400 Vdc.
The MJE5852G has a continuous collector current (IC) rating of 8 Adc.
The MJE5852G has a total power dissipation (PD) of 80 W at 25°C.
The operating and storage junction temperature range for the MJE5852G is -65°C to 150°C.
The MJE5852G is supplied in a TO-220-3 package.
Yes, the MJE5852G is RoHS3 Compliant.