| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MJE5852 from STMicroelectronics is a high voltage PNP power transistor manufactured using Multi-Epitaxial technology, providing high switching speed and voltage capability. It is suitable for applications such as switching regulators, motor control, and inverters.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 400V and a continuous collector current (IC) of 8A. The device can handle a peak collector current (ICM) of 16A and a continuous base current (IB) of 4A. Its total power dissipation (Ptot) is rated at 80W at 25°C case temperature.
Thermal performance is supported by a junction-to-case thermal resistance of 1.56°C/W. The transistor operates at junction temperatures up to 150°C and is housed in a TO-220 package, suitable for through-hole mounting.
Electrical specifications include a collector-emitter saturation voltage (VCE(sat)) of up to -5V at -8A/-3A and a base-emitter saturation voltage (VBE(sat)) of -1.5V at -4A/-1A. DC current gain (hFE) is a minimum of 5 at -5A/-5V and 15 at -2A/-5V. Switching times include a storage time (ts) of 2μs and a fall time (tf) of 0.5μs under specific test conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCES) for the MJE5852 is -450V when the base-emitter voltage is 0.
The MJE5852 has a continuous collector current rating of 8A.
The total power dissipation for the MJE5852 is 80W at a case temperature of 25°C.
The maximum operating junction temperature for the MJE5852 is 150°C.
The MJE5852 is supplied in a TO-220 package.
The DC current gain (hFE) is a minimum of 15 at IC = -2A and VCE = -5V, and a minimum of 5 at IC = -5A and VCE = -5V.