MJE5850G The ON Semiconductor MJE5850G is a PNP silicon power transistor designed for high-voltage, high-speed power switching. It features a 300V collector-emitter voltage and 8A continuous collector current.
Mfr Part #:

MJE5850G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MJE5850G is a PNP silicon power transistor designed for high-voltage, high-speed power switching. It features a 300V collector-emitter voltage and 8A continuous collector current.
Total Stock: 50 pcs
$ Price Range: $0.99

MJE5850G Available from 1 distributor

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50 pcs
50 pcs On Request 1 On Request On Request 910 On Request On Request

MJE5850G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current - Continuous
Base Current - Peak
Collector Current - Peak
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
IC (Maximum @ Note 1)
Maximum Lead Temperature for Soldering Purposes
Mounting Type
Operating Temperature
Operating and Storage Junction Temperature Range
PD (Maximum @ Tc=25 °C)
PD (Nominal @ Derate above 25 °C)
Pb-Free
Power
Supplier Device Package
Thermal Resistance - Junction to Case
Transistor Type
VCEO(sus) (Minimum @ IC = 10 mA, IB = 0)
VCEV (Minimum)
Vce Saturation (Max) @ Ib, Ic
Voltage

MJE5850G Description

Short technical summary and product information.

The MJE5850G from ON Semiconductor is a PNP silicon power transistor designed for high-voltage, high-speed power switching applications, particularly in inductive circuits where fall time is critical. It is well-suited for line-operated switch-mode applications.

 

Key electrical characteristics include a collector-emitter sustaining voltage (VCEO(sus)) of 300V for the MJE5850 variant, a continuous collector current (IC) of 8A, and a peak collector current (ICM) of 16A. The transistor can handle a total power dissipation (PD) of 80W at 25°C case temperature, with a derating of 0.640 W/°C above that temperature. The operating and storage junction temperature range is -65°C to 150°C.

 

This device is housed in a TO-220 package, suitable for through-hole mounting. The datasheet specifies performance for reversed biased SOA, switching times, saturation voltages, and leakage currents with inductive loads. It is complementary to the MJE13007 series.

 

Applications include switching regulators, inverters, solenoid and relay drivers, motor controls, and deflection circuits. The MJE5850G is Pb-Free and RoHS compliant.

MJE5850G Quick Information

Product Type: PNP Silicon Power Transistor
Series: Switch-mode
Canonical Name: MJE5850G PNP Silicon Power Transistor
Subcategory: PNP

MJE5850G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJE5850G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJE5850G Features

  • PNP silicon power transistor.
  • 300V collector-emitter sustaining voltage.
  • 8A continuous collector current.
  • 80W total power dissipation.
  • TO-220 package for through-hole mounting.

MJE5850G Applications

  • Suitable for switching regulators.
  • Used in inverter circuits.
  • Ideal for solenoid drivers.
  • Applicable for motor controls.
  • Designed for deflection circuits.

MJE5850G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter sustaining voltage of the MJE5850G?

The collector-emitter sustaining voltage of the MJE5850G is 350 Vdc.

What is the maximum collector current supported by the MJE5850G?

The maximum collector current is 8 Adc.

What package does the MJE5850G come in?

It comes in a TO-220 package.

What is the maximum operating junction temperature for the MJE5850G?

The operating junction temperature range is from -65°C to 150°C.

Is the MJE5850G RoHS compliant?

Yes, it is RoHS3 compliant.

Is the MJE5850G Pb-Free?

Yes, it is Pb-Free.

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