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MJE5731G The ON Semiconductor MJE5731G is a PNP silicon plastic power transistor designed for audio output and switching applications. It features a 350V collector-emitter voltage and 1A continuous current.
Mfr Part #:

MJE5731G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MJE5731G is a PNP silicon plastic power transistor designed for audio output and switching applications. It features a 350V collector-emitter voltage and 1A continuous current.
✓ Total Stock: 1,884 pcs
$ Price Range: $0.99

MJE5731G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
1,870 pcs
On Request
1870 pcs On Request 1 On Request On Request On Request On Request On Request
Flip Electronics ✓
Non-Authorised Inventory information
14 pcs
On Request
14 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

MJE5731G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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MJE5731G Description

Short technical summary and product information.

The ON Semiconductor MJE5731G is a high-voltage PNP silicon plastic power transistor. It is designed for applications such as line-operated audio output amplifiers, switch-mode power supply drivers, and other switching circuits.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 350Vdc and a continuous collector current (IC) of 1.0Adc. The device offers a maximum power dissipation of 40W at 25°C case temperature and a typical DC current gain (hFE) of 30 at 300mA collector current and 10V collector-emitter voltage.

 

The transistor is housed in a popular TO-220 plastic package, suitable for through-hole mounting. It operates within a junction temperature range of -65°C to +150°C. The MJE5731G is Pb-free and RoHS compliant, making it suitable for modern electronic designs.

MJE5731G Quick Information

Product Type: PNP Silicon Plastic Power Transistor
Canonical Name: MJE5731G PNP Silicon Plastic Power Transistor
Subcategory: Single

MJE5731G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MJE5731G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJE5731G Features

  • High voltage PNP silicon power transistor.
  • 350V collector-emitter voltage rating.
  • 1A continuous collector current.
  • 40W maximum power dissipation.
  • TO-220 package for through-hole mounting.

MJE5731G Applications

  • Used in high-voltage power switching circuits
  • Suitable for motor control applications
  • Ideal for amplifier circuits requiring high voltage
  • Mounts easily in through-hole designs

MJE5731G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJE5731G?

The maximum collector-emitter voltage (VCEO) for the MJE5731G is 350Vdc.

What is the continuous collector current rating of the MJE5731G?

The MJE5731G has a continuous collector current (IC) rating of 1.0Adc.

What is the package type for the MJE5731G transistor?

The MJE5731G is supplied in a TO-220-3 package.

What is the operating temperature range of the MJE5731G?

The operating temperature range for the MJE5731G is -65°C to +150°C (TJ).

Is the MJE5731G RoHS compliant?

Yes, the MJE5731G is RoHS3 Compliant.

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