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MJE5731AG The MJE5731AG is a PNP silicon plastic power transistor from ON Semiconductor. It offers a high collector-emitter voltage of 375V and a continuous current rating of 1A, housed in a TO-220 package.
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MJE5731AG

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJE5731AG is a PNP silicon plastic power transistor from ON Semiconductor. It offers a high collector-emitter voltage of 375V and a continuous current rating of 1A, housed in a TO-220 package.
✓ Total Stock: 252 pcs
$ Price Range: $1.08

MJE5731AG Available from 2 distributors

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✓ Non-Authorised
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Flip Electronics ✓
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250 pcs
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250 pcs On Request 1 On Request On Request On Request On Request On Request
Seba Components ✓
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2 pcs
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2 pcs On Request 1 On Request On Request On Request On Request On Request
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MJE5731AG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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MJE5731AG Description

Short technical summary and product information.

The MJE5731AG is a high-voltage PNP silicon plastic power transistor manufactured by ON Semiconductor. Designed for applications such as line-operated audio output amplifiers, switch-mode power supply drivers, and other switching circuits, this transistor offers robust performance.

 

Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 375V for the MJE5731A variant, a continuous collector current (IC) of 1A, and a peak collector current (ICM) of 3A. The DC current gain (hFE) is a minimum of 30 at 300mA and 10V, and a minimum of 10 at 1A and 10V. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 1V at 1A collector current and 200mA base current.

 

This device features a popular TO-220 plastic package, suitable for through-hole mounting. It operates within a wide temperature range of -65°C to +150°C (TJ). The transistor is designed as a PNP complement to the TIP47 through TIP50 series, providing flexibility in circuit design.

 

The MJE5731AG is Pb-free and RoHS compliant, making it suitable for environmentally conscious designs. Its specifications make it a reliable choice for power switching and amplification tasks in various electronic systems.

MJE5731AG Quick Information

Product Type: Bipolar Transistor
Series: MJE5731AG
Canonical Name: MJE5731AG PNP Silicon Plastic Power Transistor
Subcategory: Single

MJE5731AG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJE5731AG Estimated Pricing

Qty Low High
1+ $1.08 $1.08

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJE5731AG Features

  • High voltage PNP silicon power transistor.
  • Maximum collector-emitter voltage is 375V.
  • Continuous collector current rating of 1A.
  • Popular TO-220 plastic package.
  • Designed for switching applications.

MJE5731AG Applications

  • Suitable for high-voltage switching circuits
  • Used in power amplification applications
  • Ideal for power supply regulation
  • Applicable in motor control circuits

MJE5731AG FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJE5731AG?

The maximum collector-emitter voltage for the MJE5731AG is 375 Vdc.

What is the continuous collector current rating of the MJE5731AG?

The continuous collector current rating for the MJE5731AG is 1.0 Adc.

What type of package is the MJE5731AG in?

The MJE5731AG is in a TO-220-3 package.

What is the operating temperature range for the MJE5731AG?

The operating temperature range for the MJE5731AG is -65°C to +150°C.

Is the MJE5731AG RoHS compliant?

Yes, the MJE5731AG is RoHS3 Compliant.

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