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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Base Current - Continuous | |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage | |
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| Thermal Resistance - Junction to Case | |
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The MJE371G is a PNP silicon transistor manufactured by On Semiconductor, suitable for general-purpose amplifier and switching applications. It is recommended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry circuitry.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 40 Vdc and a continuous collector current (IC) of 4 Adc. The device offers a high DC current gain (hFE) of 40 at 1A and 1V. It can handle a total power dissipation (PD) of 40W at 25°C.
This transistor comes in a TO-126 package and is designed for through-hole mounting. The operating and storage junction temperature range is -65°C to +150°C. The device is Pb-Free and RoHS Compliant.
Its complementary NPN counterpart is the MJE521. The MJE371G is well-suited for applications requiring robust power handling in a compact form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJE371G transistor is 40 Vdc.
The MJE371G has a continuous collector current (IC) rating of 4 Adc.
The MJE371G transistor has a total power dissipation (PD) of 40 W at 25°C.
The DC current gain (hFE) of the MJE371G is a minimum of 40 at 1A collector current and 1V collector-emitter voltage.
The MJE371G transistor is available in a TO-225AA, TO-126-3 package.
The operating and storage junction temperature range for the MJE371G is -65°C to +150°C.