MJE371G The MJE371G is a PNP silicon transistor from On Semiconductor designed for general-purpose amplifier and switching circuits. It features a 40V collector-emitter voltage and 4A continuous collector current.
Mfr Part #:

MJE371G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJE371G is a PNP silicon transistor from On Semiconductor designed for general-purpose amplifier and switching circuits. It features a 40V collector-emitter voltage and 4A continuous collector current.
Total Stock: 4,000 pcs
$ Price Range: $0.99

MJE371G Available from 1 distributor

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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4,000 pcs
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MJE371G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current - Continuous
Collector Current - Peak
Collector-Base Voltage
Collector-Emitter Sustaining Voltage
Collector-Emitter Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Mounting Type
Operating Temperature
Power
Supplier Device Package
Thermal Resistance - Junction to Case
Transistor Type
Voltage

MJE371G Description

Short technical summary and product information.

The MJE371G is a PNP silicon transistor manufactured by On Semiconductor, suitable for general-purpose amplifier and switching applications. It is recommended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry circuitry.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 40 Vdc and a continuous collector current (IC) of 4 Adc. The device offers a high DC current gain (hFE) of 40 at 1A and 1V. It can handle a total power dissipation (PD) of 40W at 25°C.

 

This transistor comes in a TO-126 package and is designed for through-hole mounting. The operating and storage junction temperature range is -65°C to +150°C. The device is Pb-Free and RoHS Compliant.

 

Its complementary NPN counterpart is the MJE521. The MJE371G is well-suited for applications requiring robust power handling in a compact form factor.

MJE371G Quick Information

Product Type: Bipolar Transistor
Canonical Name: MJE371G PNP Silicon Transistor
Subcategory: Single

MJE371G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

MJE371G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJE371G Features

  • PNP silicon transistor for general applications.
  • 40V collector-emitter voltage rating.
  • 4A continuous collector current.
  • 40W maximum power dissipation.
  • TO-126 package for through-hole mounting.

MJE371G Applications

  • General-purpose amplifier circuits.
  • General-purpose switching circuits.
  • 5 to 20 Watt audio amplifiers.
  • Complementary symmetry circuitry.

MJE371G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJE371G transistor?

The maximum collector-emitter voltage (VCEO) for the MJE371G transistor is 40 Vdc.

What is the continuous collector current rating of the MJE371G?

The MJE371G has a continuous collector current (IC) rating of 4 Adc.

What is the power dissipation of the MJE371G transistor?

The MJE371G transistor has a total power dissipation (PD) of 40 W at 25°C.

What is the DC current gain (hFE) of the MJE371G?

The DC current gain (hFE) of the MJE371G is a minimum of 40 at 1A collector current and 1V collector-emitter voltage.

What type of package is the MJE371G transistor in?

The MJE371G transistor is available in a TO-225AA, TO-126-3 package.

What is the operating temperature range for the MJE371G?

The operating and storage junction temperature range for the MJE371G is -65°C to +150°C.

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