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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,084 pcs
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5084 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The MJE350STU from ON Semiconductor is a PNP bipolar junction transistor (BJT) suitable for various electronic applications. It is designed for through-hole mounting and comes in a TO-126-3 package.
Key electrical characteristics include a maximum collector-emitter voltage rating of 300V and a continuous collector current of 500mA. The transistor can dissipate up to 20W of power. Its DC current gain (hFE) is a minimum of 30 at 50mA and 10V. The operating temperature range extends up to 150°C (TJ).
This component is ideal for applications requiring a high-voltage PNP transistor. Its through-hole package facilitates easy integration into circuit boards for prototyping and production.
Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are noted as unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 300V.
The continuous collector current is 500mA.
The power dissipation is 20W.
The minimum DC current gain (hFE) is 30 at 50mA and 10V.
The operating temperature range is up to 150°C (TJ).
It is mounted using the through-hole method.
The package type is TO-126-3.