MJE350G The ON Semiconductor MJE350G is a PNP bipolar transistor designed for general-purpose applications. It offers a 300V breakdown voltage and a 0.5A continuous collector current.
Mfr Part #:

MJE350G

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MJE350G is a PNP bipolar transistor designed for general-purpose applications. It offers a 300V breakdown voltage and a 0.5A continuous collector current.
✓ Total Stock: 15,045 pcs
$ Price Range: $0.99

MJE350G Available from 5 distributors

✓ Authorised
✓ Non-Authorised

MJE350G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Power Dissipation
Supplier Device Package
Transistor Type
Voltage

MJE350G Description

Short technical summary and product information.

The MJE350G from ON Semiconductor is a PNP bipolar junction transistor (BJT) suitable for various electronic circuits. It features a maximum collector-emitter voltage (VCEO) of 300V and a continuous collector current of 0.5A. The transistor can dissipate up to 20W of power.

 

With a DC current gain (hFE) of at least 30 at 50mA and 10V, the MJE350G provides moderate amplification. It operates within a temperature range of -65°C to 150°C. The component is housed in a TO-126 package, designed for through-hole mounting.

 

This transistor is often used in power switching and amplification applications where a robust PNP device is required. Its specifications make it suitable for use in power supplies, audio amplifiers, and general switching circuits.

MJE350G Quick Information

Product Type: Bipolar Transistor
Series: Mje350
Canonical Name: MJE350G PNP Bipolar Transistor
Subcategory: Single

MJE350G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJE350G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJE350G Features

  • PNP bipolar junction transistor.
  • 300V collector-emitter voltage rating.
  • 0.5A continuous collector current.
  • 20W maximum power dissipation.
  • TO-126 through-hole package.

MJE350G Applications

  • Suitable for power switching circuits.
  • Used in general amplification tasks.
  • Applicable in power supply designs.
  • Can be used in audio amplifier circuits.

MJE350G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJE350G?

The maximum collector-emitter voltage (VCEO) for the MJE350G is 300V.

What is the continuous collector current rating?

The continuous collector current rating for the MJE350G is 0.5A.

What is the power dissipation of the MJE350G?

The MJE350G has a power dissipation of 20W.

What is the operating temperature range?

The operating temperature range for the MJE350G is -65°C to 150°C.

What package type is the MJE350G supplied in?

The MJE350G is supplied in a TO-126 package.

What is the minimum DC current gain (hFE)?

The minimum DC current gain (hFE) for the MJE350G is 30 at 50mA and 10V.

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