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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
459 pcs
|
459 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
36 pcs
|
36 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Power | |
| Supplier Device Package | |
| Supplier Package | |
| Transistor Type | |
| Voltage |
The MJE350 from ON Semiconductor is a PNP bipolar junction transistor (BJT) suitable for power applications. It offers a maximum collector-emitter voltage (Vce) of 300V and a continuous collector current (Ic) of 500mA. The transistor has a power dissipation rating of 20W.
This device is designed for through-hole mounting and comes in a TO-225AA or TO-126-3 package, with the supplier package specified as TO-126. The DC current gain (hFE) is a minimum of 30 at 50mA collector current and 10V collector-emitter voltage. Its robust construction and electrical characteristics make it suitable for various power switching and amplification circuits.
Key electrical parameters include a maximum collector current of 500mA and a maximum collector-emitter voltage of 300V. The minimum DC current gain is 30, measured under specific test conditions. The MJE350 is designed for reliable operation in power circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum operating voltage of the MJE350 is 300V.
The MJE350 is available in TO-225AA and TO-126-3 packages.
The maximum collector current is 0.5A.