| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor MJE344 is a plastic NPN silicon medium-power transistor suitable for medium voltage applications requiring high fT, such as converters and extended range amplifiers.
Key electrical specifications include a collector-emitter voltage of 200Vdc, a continuous collector current of 500mAdc, and a DC current gain (hFE) ranging from 30 to 300. The device has a maximum power dissipation of 20W at 25°C and a current-gain bandwidth product of 15MHz.
This transistor is housed in a TO-225AA, TO-126-3 package and is designed for through-hole mounting. The operating and storage junction temperature range is from -65°C to +150°C. The device is RoHS compliant and has an MSL rating of 1.
Applications include converters and extended range amplifiers where medium voltage and moderate current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJE344 is 200 Vdc.
The MJE344 transistor has a continuous collector current (IC) rating of 500 mAdc.
The total power dissipation (PD) for the MJE344 at 25°C is 20 W.
The operating and storage junction temperature range for the MJE344 is -65°C to +150°C.
The MJE344 is available in a TO-225AA, TO-126-3 package.
The minimum DC current gain (hFE) for the MJE344 is 30 at 50mA collector current and 10V collector-emitter voltage.
The current-gain bandwidth product (fT) of the MJE344 is 15 MHz at 50mA collector current and 25V collector-emitter voltage.