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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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800 pcs
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800 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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| Contact Plating | |
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The On Semiconductor MJE340STU is a silicon NPN bipolar junction transistor (BJT) designed for general-purpose applications. It offers a collector-emitter voltage rating of 300V and a maximum continuous collector current of 500mA.
Key electrical characteristics include a minimum DC current gain (hFE) of 30 at 50mA and 10V. The transistor can dissipate up to 20W of power and operates within a junction temperature range of -65°C to 150°C.
This device is packaged in a TO-225AA, TO-126-3 through-hole package, suitable for various mounting configurations. The contact plating is tin.
Applications for the MJE340STU include inverter interface drivers and muting circuits. Its specifications make it a versatile component for power switching and amplification tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJE340STU is 300V.
The maximum continuous collector current for the MJE340STU is 500mA.
The MJE340STU transistor has a power dissipation rating of 20W.
The operating junction temperature for the MJE340STU is up to 150°C.
The minimum DC current gain (hFE) for the MJE340STU is 30 at 50mA collector current and 10V collector-emitter voltage.
The MJE340STU is available in a TO-225AA, TO-126-3 package.
The MJE340STU is a through-hole mounted component.