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481 pcs
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481 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MJE340 from CDIL is an NPN epitaxial silicon power transistor housed in a TO-126 plastic package. This device is engineered for high voltage general purpose applications, offering a collector-emitter voltage (VCEO) of 300V and a continuous collector current (IC) of 500mA.
Key electrical characteristics include a DC current gain (hFE) ranging from 30 to 240 at 50mA and 10V. The transistor also exhibits a collector-emitter saturation voltage (VCE(SAT)) of 0.5V maximum at 100mA and 10mA base current, and a base-emitter saturation voltage (VBE(SAT)) of 1.0V maximum under the same conditions.
With a power dissipation of 1.25W at 25°C ambient temperature and 20W at 25°C case temperature, the MJE340 is suitable for medium power applications. The operating and storage junction temperature range is from -65°C to +150°C. The thermal resistance from junction to ambient is 100°C/W, and from junction to case is 6.25°C/W.
This transistor is available in a RoHS3 compliant status and has a Moisture Sensitivity Level (MSL) of 1. It is designed for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the MJE340 transistor is 300V.
The MJE340 has a continuous collector current (IC) rating of 500mA.
The MJE340 transistor comes in a TO-126 leaded plastic package.
The operating and storage junction temperature range for the MJE340 is -65°C to +150°C.
The DC Current Gain (hFE) for the MJE340 is between 30 and 240 when tested at IC=50mA and VCE=10V.
The Collector-Emitter Saturation Voltage (VCE(SAT)) for the MJE340 is a maximum of 0.5V at IC=100mA and IB=10mA.