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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
995 pcs
|
995 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
300 pcs
|
300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Collector Cutoff (Max) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Frequency - Transition | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power - Max | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MJE3055TTU is an NPN bipolar junction transistor manufactured by ON Semiconductor. This component is designed for general-purpose applications requiring a breakdown voltage of up to 60V and a continuous collector current of 10A.
Key electrical characteristics include a minimum DC current gain (hFE) of 20 at 4A and 4V, and a Vce saturation voltage of 8V maximum at 3.3A and 10A. The transition frequency is specified at 2MHz.
This transistor is housed in a TO-220-3 package and utilizes through-hole mounting. The operating temperature range extends up to 150°C (TJ). Its specifications make it suitable for various power switching and amplification circuits.
Environmental compliance data indicates RoHS3 compliance, REACH unaffected status, and Moisture Sensitivity Level 1. However, this compliance data is unverified and should be treated with low confidence.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the MJE3055TTU is 10A.
The collector-emitter breakdown voltage of the MJE3055TTU is 60V.
The operating temperature range for the MJE3055TTU is up to 150°C (TJ).
The MJE3055TTU is supplied in a TO-220-3 package.