MJE3055TTU The MJE3055TTU is an NPN bipolar transistor from ON Semiconductor. It offers a 60V collector-emitter breakdown voltage and a maximum collector current of 10A.
Mfr Part #:

MJE3055TTU

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJE3055TTU is an NPN bipolar transistor from ON Semiconductor. It offers a 60V collector-emitter breakdown voltage and a maximum collector current of 10A.
Total Stock: 1,295 pcs
$ Price Range: $0.99

MJE3055TTU Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
995 pcs
995 pcs On Request 1 On Request On Request 19+ On Request On Request
Non-Authorised Inventory information
300 pcs
300 pcs On Request 1 On Request On Request On Request On Request On Request

MJE3055TTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Frequency - Transition
Mounting Type
Operating Temperature
Power
Power - Max
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJE3055TTU Description

Short technical summary and product information.

The MJE3055TTU is an NPN bipolar junction transistor manufactured by ON Semiconductor. This component is designed for general-purpose applications requiring a breakdown voltage of up to 60V and a continuous collector current of 10A.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 20 at 4A and 4V, and a Vce saturation voltage of 8V maximum at 3.3A and 10A. The transition frequency is specified at 2MHz.

 

This transistor is housed in a TO-220-3 package and utilizes through-hole mounting. The operating temperature range extends up to 150°C (TJ). Its specifications make it suitable for various power switching and amplification circuits.

 

Environmental compliance data indicates RoHS3 compliance, REACH unaffected status, and Moisture Sensitivity Level 1. However, this compliance data is unverified and should be treated with low confidence.

MJE3055TTU Quick Information

Product Type: NPN Bipolar Transistor
Canonical Name: MJE3055TTU NPN Bipolar Transistor
Subcategory: NPN

MJE3055TTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJE3055TTU Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJE3055TTU Features

  • NPN bipolar junction transistor
  • 60V collector-emitter breakdown voltage
  • 10A maximum collector current
  • TO-220-3 package for through-hole mounting
  • Operates up to 150°C junction temperature

MJE3055TTU Applications

  • Used in power supply circuits
  • Suitable for motor control applications
  • Ideal for audio amplification
  • Power switching in electronic devices

MJE3055TTU FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum collector current for the MJE3055TTU?

The maximum collector current for the MJE3055TTU is 10A.

What is the collector-emitter breakdown voltage of the MJE3055TTU?

The collector-emitter breakdown voltage of the MJE3055TTU is 60V.

What is the operating temperature range for the MJE3055TTU?

The operating temperature range for the MJE3055TTU is up to 150°C (TJ).

What package type is the MJE3055TTU supplied in?

The MJE3055TTU is supplied in a TO-220-3 package.

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