MJE3055TG The MJE3055TG is an NPN bipolar junction transistor from ON Semiconductor. It is designed for general-purpose amplifier and switching applications.
Mfr Part #:

MJE3055TG

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJE3055TG is an NPN bipolar junction transistor from ON Semiconductor. It is designed for general-purpose amplifier and switching applications.
✓ Total Stock: 6,220 pcs
$ Price Range: $0.99

MJE3055TG Available from 3 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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4,000 pcs
4000 pcs On Request 1 On Request On Request On Request On Request On Request
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2,100 pcs
2100 pcs On Request 1 On Request On Request 24+ On Request On Request
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120 pcs
120 pcs On Request 1 On Request On Request On Request On Request On Request

MJE3055TG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Thermal Resistance
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJE3055TG Description

Short technical summary and product information.

The MJE3055TG is an NPN silicon power transistor manufactured by ON Semiconductor. It is designed for general-purpose amplifier and switching applications, offering a high current gain-bandwidth product. This device features a maximum collector current of 10A and a collector-emitter voltage of 60V.

 

The transistor is housed in a TO-220 package, suitable for through-hole mounting. It has a total power dissipation of 75W at 25°C case temperature and an operating junction temperature range of -55°C to 150°C. The MJE3055TG is a complementary device to the MJE2955T PNP transistor.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 20 at 4A and 4V, and a collector-emitter saturation voltage (VCE(sat)) of 8V at 10A and 3.3A base current. The current-gain-bandwidth product (fT) is 2MHz at 500mA and 10V.

 

This transistor is RoHS 3 compliant and has a moisture sensitivity level of 1.

MJE3055TG Quick Information

Product Type: NPN Transistor
Canonical Name: MJE3055TG NPN Power Transistor
Subcategory: Single

MJE3055TG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJE3055TG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJE3055TG Features

  • NPN silicon power transistor.
  • Rated for 60V collector-emitter voltage.
  • Handles up to 10A collector current.
  • 75W total power dissipation.
  • TO-220 package for through-hole mounting.

MJE3055TG Applications

  • Suitable for high-power switching circuits
  • Used in power amplification applications
  • Ideal for motor control and power regulation
  • Designed for through-hole mounting in industrial equipment

MJE3055TG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector current for the MJE3055TG transistor?

The maximum collector current (IC) is 10 Adc.

What is the collector-emitter voltage rating of the MJE3055TG?

The collector-emitter voltage (VCEO) is 60 Vdc.

What is the power dissipation of the MJE3055TG at 25°C?

The total device dissipation (PD) at TC = 25°C is 75 W.

What is the operating temperature range for the MJE3055TG?

The operating and storage junction temperature range (TJ, Tstg) is -55°C to +150°C.

What package type is the MJE3055TG supplied in?

The MJE3055TG is supplied in a TO-220 package.

Is the MJE3055TG RoHS compliant?

Yes, the MJE3055TG is RoHS 3 compliant.

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