| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,100 pcs
|
2100 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
120 pcs
|
120 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The MJE3055TG is an NPN silicon power transistor manufactured by ON Semiconductor. It is designed for general-purpose amplifier and switching applications, offering a high current gain-bandwidth product. This device features a maximum collector current of 10A and a collector-emitter voltage of 60V.
The transistor is housed in a TO-220 package, suitable for through-hole mounting. It has a total power dissipation of 75W at 25°C case temperature and an operating junction temperature range of -55°C to 150°C. The MJE3055TG is a complementary device to the MJE2955T PNP transistor.
Key electrical characteristics include a minimum DC current gain (hFE) of 20 at 4A and 4V, and a collector-emitter saturation voltage (VCE(sat)) of 8V at 10A and 3.3A base current. The current-gain-bandwidth product (fT) is 2MHz at 500mA and 10V.
This transistor is RoHS 3 compliant and has a moisture sensitivity level of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (IC) is 10 Adc.
The collector-emitter voltage (VCEO) is 60 Vdc.
The total device dissipation (PD) at TC = 25°C is 75 W.
The operating and storage junction temperature range (TJ, Tstg) is -55°C to +150°C.
The MJE3055TG is supplied in a TO-220 package.
Yes, the MJE3055TG is RoHS 3 compliant.